HCT7000M

N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Features: • • • • 200 mA ID Ultra small surface mount package RDS(ON) < 5Ω Pin-out compatible with most SOT23 MOSFETS Description: The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pin-out and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages. TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C. Applications: • • • • Switching applications: small servo motor control, power MOSFET gate drives Relay Drivers High Speed Line Drivers Power Supplies Part Number HCT7000M HCT7000MTX HCT7000MTXV Sensor Type VDSS Min VGS(TH) Min/ Max ID(ON) (mA) Min N-Channel Enhanced MOSFET 60 0.8 / 3.0 75 General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc Gfs (ms) t(ON) / t(OFF) (ns) Min Max 100 10 / 10 Package 3-pin Ceramic TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue A 11/2016 Page 1 N-Channel Enhancement Mode MOS Transistor HCT7000M, HCT70000MTX, HCT7000MTXV Performance Absolute Maximum Ratings Drain Source Voltage 60V Gate-Source Voltage ±40 V Drain Current 200 mA Power Dissipation (TA = 25° C) 300 mW Power Dissipation (TS(1) = 25° C) 600 mW(2) Operating and Storage Temperature -55° C to 150° C Thermal Resistance RØJC 100° C/W Thermal Resistance RØJA 583° C/W Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNITS VDSS Drain Source Voltage 60 VGS(TH) Gate Threshold Voltage .8 IGSS Gate Leakage IDSS Zero Gate Voltage Drain Current ID(ON) On-Site Drain Current RDS(ON) Drain Source on-Resistance VDS(ON) Drain Source on-Voltage Gfs Forward Transconductance Ciss Input Capacitance 60 pF Coss Output Capacitance 25 pF Crss Reverse Transfer Capacitance 5 pF t(on) Turn-on Time 10 ns t(off) Turn-off Time 10 ns TEST CONDITIONS V VGS = 0 V, ID = 10 µa 3.0 V VDS = VGS, ID = 1 mA ±10 nA VDS = 0 V, VGS = ±15 V 1 µA VGS = 0 V, VDS = 48 V mA VDS = 10 V, VGS = 4.5 V 75 5 Ω VGS = 10 V, ID = 0.5 A 2.5 V VGS = 10 V, ID = 0.5 A mS VDS = 10 V, ID = 0.2 A 100 VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25Ω Note: 1) TS = Substrate temperature that the chip carrier is mounted on. 2) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measurable as an outgoing test. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT electronics plc TT Electronics | OPTEK Technology 2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200 www.ttelectronics.com | sensors@ttelectronics.com Issue A 11/2016 Page 2