OP580DA

    Wide acceptance angle High Current Gain Fast Response Time Plastic leadless chip carrier (PLCC) The OP580DA is an NPN silicon phototdarlington mounted in a miniature SMD package. This device has a flat window lens, which enables a wide acceptance angle. It is packaged in a plastic leadless chip carrier which is compatible with most automated mounting equipment. OP580DA are 100% production tested using infrared light for close correlation with Optek GaAs and GaAlAs emitters. Photo darlington devices are normally used in application where light signals are low and more current gain is needed than is possible with phototransistors. OP580DA is mechanically and spectrally matched to the OP280 series infrared LEDs.     Ordering Information Non-contact position sensing Datum detection Machine automation Optical encoders Part Number OP580DA Viewing Angle 100° Sensor Photo Darlington Lead Length N/A OP580DA Polarity Mark 1 2 DIMENSIONS ARE IN: RoHS [MILLIMETERS] INCHES Pin # Transistor 1 Collector 2 Emitter -40o C to +100o C Storage Temperature Range -25o C to +85o C Operating Temperature Range 260° C(1) Lead Soldering Temperature Collector-Emitter Voltage 35 V Emitter-Collector Voltage 5V Collector Current 32 mA 100 mW(2) Power Dissipation IC(ON) VCE(SAT) ICE0 On-State Collector Current VCE = 5.0 V, EE = 0.15 mW/cm2(3) 10.0 - - mA Collector-Emitter Saturation Voltage - - 1.7 V IC = 1 mA, EE = 0.15 mW/cm2(3) Collector-Emitter Dark Current - - 1.0 µA VCE = 5.0 V, EE = 0(4) V(BR)CEO Collector-Emitter Breakdown Voltage 35 - - V IC = 400 µA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA Rise Time , Fall Time - 50 - µs IC = 1 mA, RL = 1 KΩ tr, tf Notes: 1. Solder time less than 5 seconds at temperature extreme. 2. Derate linearly at 1.33 mW/° C above 25° C. 3. EE(APT) is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. 4. To calculate typical collector dark current in µA, use the formula ICEO = 10(0.04 TA-3/4) where TA is the ambient temperature in ° C. Normalized Collector Current Vs Angular Displacement Relative Response vs Angular Position Relative Response vs Wavelength 1001 1 100 0.9 0.9 800.8 Relative Response (%) 0.7 60 0.6 0.5 40 0.4 0.3 600.6 0.5 400.4 0.3 0.1 0.1 0 0 400 0.7 200.2 20 0.2 500 600 700 800 900 1000 1100 40 0 45 0 50 0 55 0 60 0 65 0 70 0 75 0 80 0 85 0 90 0 95 0 10 00 10 50 11 00 Relative Response (%) 80 Normalized Collector Current 0.8 Wavelength (nm) 00 -90 -90 -80 -70 -60 -60 -50 -40 -30 -30 -20 -10 0 0 10 20 Angular Displacement (Deg) 30 30 40 Angular Position (Degrees) 50 60 60 70 80 90 90 Relative On-State Collector Current vs Temperature Relative Collector Current-IC (mA) vs. Irradiance-Ee (mW/cm2) ON-STATE COLLECTOR CURRENT Vs IRRADIANCE 1.40 40 140 Normalized at Ee = 1mW/cm2 Conditions: VCE = 5V, λ = 935nm, TA = 25 °C 35 Normalized at TA = 25° C . Conditions: VCE = 5 V, λ = 935 nm, TA = 25° C 1.30 130 Relative Collector Current (%) 1.4 30 1.2 25 IC(ON) -ON-STATE COLLECTOR CURRENT (ma) Relative Collector Current—IC (mA) 1.6 1.0 20 0.8 15 0.6 10 0.4 1.20 120 1.10 110 1.00 100 0.90 90 0.80 80 0.70 70 5 0.2 0.60 0.0 0 1 0 2 0.5 3 4 1.0 5 6 1.5 Ee - IRRADIANCE (mW/cm2) 7 8 -25 -25 2.0 00 25 25 Irradiance- Ee (mW/cm2) 100 100 Relative On-State Collector Current ON-STATE COLLECTOR CURRENT Vs COLLECTOR TO EMITTER VOLTAGE vs. Collector-Emitter Voltage OP520 Collector Dark Current Vs. Ambient Temperature 1000 1000 30 1.4 1.2 mW/cm2 2 100 100 10 10 1 1 0 0 -20 -25 5 0 30 25 55 50 TA - Ambient Temperature (°C) Temperature (°C) 80 75 100 25 1.2 IC(ON) - ON-STATE COLLECTOR CURRENT (mA) IC(ON) - On-State Collector Current (mA) Conditions: Ee = 0 mW/cm VCE = 10V ICEO - Collector Dark Current (nA) (Log Scale) 75 75 Temperature (°C) Collector-Emitter Dark Current vs Temperature Collector-Emitter Dark Current (nA) 50 50 1.0 mW/cm2 20 1.0 0.8 mW/cm2 1mW/cm2 0.8 17.5 2mW/cm2 0.6 mW/cm2 3mW/cm2 4mW/cm2 0.6 15.0 5mW/cm2 6mW/cm2 2 0.4 mW/cm 0.4 12.5 0.2 mW/cm2 0.2 10.0 0.0 0.00 0 0.10 0.5 0.20 1.0 0.30 1.5 0.40 2.5 VCE - COLLECTOR TO EMITTER VOLTAGE (V) Collector-Emitter Voltage (V) 30.50