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80EPF10

80EPF10

  • 厂商:

    IRF

  • 封装:

  • 描述:

    80EPF10 - FAST SOFT RECOVERY RECTIFIER DIODE - International Rectifier

  • 数据手册
  • 价格&库存
80EPF10 数据手册
Bulletin I2131 rev. B 10/01 QUIETIR Series 80EPF.. HV FAST SOFT RECOVERY RECTIFIER DIODE VF t rr < 1.2 V @ 40A = 90 ns VRRM 1000 to 1200V Description/Features The 80EPF.. fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. Major Ratings and Characteristics Characteristics IF(AV) Sinusoidal waveform VRRM IFSM VF trr TJ @ 40 A, TJ = 25°C @ 1A, - 100A/µs 80EPF.. 80 1000 to 1200 1100 1.2 90 - 40 to 150 Units A V A V ns TO-247AC °C www.irf.com 1 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Voltage Ratings VRRM , maximum Part Number peak reverse voltage V 80EPF10 80EPF12 1000 1200 VRSM , maximum non repetitive peak reverse voltage V 1100 1300 IRRM 150°C mA 12 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current IFSM I2t Max. Peak One Cycle Non-Repetitive Surge Current Max. I2t for fusing 80EPF.. 80 1100 1250 5000 7000 Units A A A2s A √s 2 Conditions @ TC = 92° C, 180° conduction half sine wave 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied t = 0.1 to 10ms, no voltage reapplied I √t 2 Max. I √t for fusing 2 70000 Electrical Specifications Parameters VFM rt Max. Forward Voltage Drop Forward slope resistance 80EPF.. 1.35 4.03 0.87 0.1 12 Units V mΩ V mA Conditions @ 80A, TJ = 25°C TJ = 150°C TJ = 25 °C TJ = 150 °C VF(TO) Threshold voltage IRM Max. Reverse Leakage Current VR = rated VRRM Recovery Characteristics Parameters trr Irr Qrr S Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Snap Factor 80EPF.. 480 7.1 2.1 0.5 Units ns A µC Conditions IF @ 80Apk @ 25A/ µs @ 25°C 2 www.irf.com 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 80EPF.. - 40 to 150 - 40 to 150 0.35 40 0.2 6 (0.21) Min. Max. 6 (5) 12 (10) Units °C °C °C/W °C/W °C/W g (oz.) Kg-cm (Ibf-in) Conditions RthJC Max. Thermal Resistance Junction to Case RthJA Max. Thermal Resistance Junction to Ambient RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque Case Style M axim um Allo wab le C ase T em perature ( C ) 150 140 130 120 110 100 90 80 0 10 20 30 40 50 60 70 80 30 60 C o nd uctio n A ngle DC operation Mounting surface , smooth and greased TO-247AC JEDEC M ax im um Allow a ble C a se Tem p erature ( C ) 1 50 1 40 1 30 1 20 1 10 1 00 90 DC 80 0 20 40 60 80 100 1 20 14 0 Averag e Forw ard C urrent (A ) 30 60 90 120 180 C o nd u ction P erio d 80EPF.. Series R thJ C (D C ) = 0.35 C /W 80EPF.. Series R thJC (D C ) = 0.35 C /W 90 120 180 90 Avera ge Forw a rd C urren t (A) Fig. 1 - Current Rating Characteristics M axim um Averag e Forw ard Pow er Loss (W ) M a xim um A vera ge Forw a rd Pow er Loss (W ) 20 0 17 5 15 0 12 5 DC 180 120 90 60 30 1 40 1 20 1 00 80 60 Fig. 2 - Current Rating Characteristics 180 120 90 60 30 R M S Lim it 10 0 RM S Lim it 75 50 25 0 0 20 40 60 80 1 00 1 20 1 40 Averag e Forw ard C urrent (A) 80EPF.. Series T J = 150 C C o nd u ctio n P e rio d C o nd uc tio n A ngle 40 20 0 0 10 20 30 40 50 60 70 80 90 Averag e Forw ard C urrent (A) 80EPF.. Series T J = 150 C Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics www.irf.com 3 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Peak H alf Sine W a ve Forwa rd C urrent (A ) 1200 1100 1000 900 800 700 600 500 400 300 1 10 1 00 N umber O f Equal A mplitude Half Cycle Curre nt Pulses (N) Peak Ha lf Sine W ave Forw ard C urrent (A) At An y Ra te d Load C ondition A nd W ith Ra te d VRRM Ap plied Follow in g Surg e. 1300 1200 1100 1000 900 800 700 600 500 400 300 0 .01 M axim um Non Repetitive Surge C urrent V ersus Pulse Train D uration . In itia l T J = 150 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Initial T J = 150 C N o V olta g e Rea pp lie d Ra ted V RRM Rea pp lie d 80EP F.. Se ries 80 EPF.. Se rie s 0.1 Pu lse Tra in D ura tion (s) 1 Fig. 5 - Maximum Non-Repetitive Surge Current 10 0 0 Instantan eo us Forw a rd C urre nt (A ) Fig. 6 - Maximum Non-Repetitive Surge Current 100 T J= 2 5 C 10 T J= 1 50 C 80EPF.. Series 1 0 0 .5 1 1 .5 2 2.5 3 3 .5 4 4.5 Insta nta n eous Forw ard V olta ge (V ) Fig. 7 - Forward Voltage Drop Characteristics Maximum Reverse Recovery Time - Trr (ns) 800 700 600 500 400 300 200 100 0 0 40 80 120 160 200 Rate of Fall Of Forward Current - di/dt (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25°C 1A Ifm = 80 A 40 A 20 A 10 A Maximum Reverse Recovery Time - Trr (ns) 1800 1600 1400 1200 1000 800 600 400 200 0 0 40 80 120 160 200 Rate of Fall Of Forward Current - di/dt (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150°C Ifm = 80 A 40 A 20 A 80EPF.. Series Tj = 25 ˚C 80EPF.. Series Tj = 150 ˚C 10 A 1A 4 www.irf.com 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Maximum Reverse Recovery Charge - Qrr (nC) 12000 10000 8000 6000 4000 2000 1A 40 A 20 A 10 A Maximum Reverse Recovery Charge - Qrr (nC) 25000 20000 15000 10000 5000 1A 80EPF.. Series Tj = 25 ˚C Ifm = 80 A 80EPF.. Series Tj = 150 ˚C Ifm = 80 A 40 A 20 A 10 A 0 0 40 80 120 160 200 Rate of Fall Of Forward Current - di/dt (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25°C 0 0 40 80 120 160 200 Rate of Fall Of Forward Current - di/dt (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150°C M axim um Reverse R ec overy C urre nt - Irr (A ) 60 50 40 20 A M axim um Reverse R ec overy C urre nt - Irr (A ) 45 40 35 30 25 20 15 10 5 0 0 40 80 1 20 16 0 2 00 Ra te O f Fa ll O f Forw ard C urrent - d i/d t (A / s) 40 A 20 A 10 A 1A 8 0 EP F.. Se ries T J = 25 C I F M = 80 A 80EP F.. Se ries T J = 150 C I FM = 80 A 40 A 30 20 10 A 1A 10 0 0 40 80 120 16 0 200 Ra te O f Fall O f Forw ard C urren t - d i/d t (A/ s) Fig. 12 - Recovery Current Characteristics, TJ = 25°C Transien t Therm al Im ped ance Z t hJC ( C /W ) 1 Fig. 13 - Recovery Current Characteristics, TJ = 150°C 0 .1 D D D D D = = = = = 0.50 0.33 0.25 0.17 0.08 Stea d y Sta te V a lue (D C O p e ra tio n) 0.01 Sing le Pulse 8 0EP F.. Series 0.0 01 0.000 1 0 .001 0.01 0.1 1 10 Sq ua re W a v e Pulse D ura tio n (s) Fig. 14 - Thermal Impedance ZthJC Characteristics www.irf.com 5 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Outline Table 15 .90 (0 .626 ) 15 .30 (0 .602 ) 5. 70 ( 0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 3 (2 PLCS.) 3. 65 (0 .14 4) 3. 55 (0 .13 9) DIA. 5. 30 (0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 (0 .17 0) 3. 70 (0 .14 5) 2. 20 (0 .08 7) 1. 40 (0 .05 6) 2. 40 (0 .09 5) M AX . 0.80 ( 0.032) 0. 40 (0 .21 3) M AX . 1. 00 (0 .03 9) 10. 94 ( 0.430) 10 .86 ( 0 .427 ) Dimensions in millimeters and inches Ordering Information Table Device Code 80 1 1 2 3 4 5 6 Current Rating Circuit Configuration: E = Single Diode Package: P = TO-247AC Type of Silicon: F = Fast Recovery E 2 P 3 F 4 12 5 Base Cathode BA SE 2 C ATHO D E C ATHO D E 1 Anode AN O D E 3 Anode Voltage code: Code x 100 = VRRM 10 = 1000V 12 = 1200V 6 www.irf.com 80EPF.. HV QUIETIR Series Bulletin I2131 rev. B 10/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/01 www.irf.com 7
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