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8TQ10

8TQ10

  • 厂商:

    IRF

  • 封装:

  • 描述:

    8TQ10 - SCHOTTKY RECTIFIER - International Rectifier

  • 数据手册
  • 价格&库存
8TQ10 数据手册
Bulletin PD-20561 rev. D 07/03 8TQ... 8TQ...S SCHOTTKY RECTIFIER 8 Amp IF(AV) = 8 Amp VR = 80 - 100V Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF TJ @ 8 Apk, TJ = 125°C range Description/ Features Units A V A V °C The 8TQ Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 175° C TJ operation 8TQ 8 80 - 100 850 0.58 - 55 to 175 Case Styles 8TQ... 8TQ... S TO-220 D2PAK www.irf.com 1 8TQ... Series Bulletin PD-20561 rev. D 07/03 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) 80 100 VRWM Max. Working Peak Reverse Voltage (V) 8TQ080 8TQ100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 5 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 8TQ 8 850 230 7.50 0.50 Units A Conditions 50% duty cycle @ TC = 157° C, rectangular wave form Following any rated load condition and 10ms Sine or 6ms Rect. pulse with rated V RRM applied 5µs Sine or 3µs Rect. pulse TJ = 25 °C, IAS = 0.50 Amps, L = 60 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 8TQ 0.72 0.88 0.58 0.69 Units V V V V mA mA pF nH V/ µs @ 8A @ 16A @ 8A @ 16A TJ = 25 °C TJ = 125 °C Conditions TJ = 25 °C TJ = 125 °C VR = rated V R IRM CT LS Max. Reverse Leakage Current (1) * See Fig. 2 Max. Junction Capacitance Typical Series Inductance 0.55 7 500 8 10000 VR = 5VDC (test signal range 100Khz to 1Mhz) 25 °C Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change (Rated VR) (1) Pulse Width < 300µs, Duty Cycle < 2% Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range 8TQ -55 to 175 -55 to 175 2.0 0.50 2 (0.07) Min. Max. 6 (5) 12 (10) Units °C °C °C/W °C/W g (oz.) Kg-cm (Ibf-in) DC operation Conditions RthJC Max. Thermal Resistance Junction to Case RthCS Typical Thermal Resistance, Case to Heatsink wt T Approximate Weight Mounting Torque * See Fig. 4 Mounting surface , smooth and greased 2 www.irf.com 8TQ... Series Bulletin PD-20238 rev. D 07/03 1000 100 10 1 0.1 0.01 0.001 0.0001 T = 175°C J 150°C 125°C 100°C 75°C 50°C 25°C 100 Ins tantaneousForward Current - I F (A) R everse Current - I R (mA) 0 20 40 60 80 100 10 TJ= 175°C TJ= 125°C TJ= 25°C Revers Voltage - VR (V) e Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) 1 T = 25°C J 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 100 0 10 20 30 40 50 60 70 80 90 100110 Reverse Volta ge - VR (V) Forward Voltage Drop - VFM (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 10 T hermal Impedance Z thJC (°C/ W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Notes : S ingle Pulse (T herma l Resistanc e) 0.001 0.00001 0.0001 0.001 0.01 0.1 P DM 0.1 t1 t2 0.01 1. Duty factor D = t 1 / t 2 2. Peak T = P x Z thJC+ TC J DM 1 10 100 t 1 , Rectangular Pulse Dura tio n (S onds) ec Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics www.irf.com 3 8TQ... Series Bulletin PD-20561 rev. D 07/03 180 Allowable Case Temperature - (°C) 7 Average Power Loss - (Watts) 6 5 4 RMSLimit 3 2 1 0 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 175 170 165 160 155 150 145 see note (2) DC S quare wave (D = 0.50) 80% Rated V R applied 140 0 2 4 6 8 10 12 0 2 4 6 8 10 12 (A) Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current 1000 Non-Repetitive Surge Current - I FS (A) M Fig. 6 - Forward Power Loss Characteristics At Any R ated Load Condition And With R ated V RR Applied M Following S urge 100 10 100 1000 10000 S quare Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L HIGH-S PEED S CH WIT F REE-WHEEL DIODE 40HF 40S L 02 + DUT IR P460 F R = 25 ohm g Vd = 25 Volt CURRENT MONIT OR Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = VR1 x I R (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 8TQ... Series Bulletin PD-20238 rev. D 07/03 Outline Table 10.54 (0.41) MAX. 3.78 (0.15) 3.54 (0.14) 15.24 (0.60) 14.84 (0.58) 1 14.09 (0.55) 13.47 (0.53) 3 3.96 (0.16) 3.55 (0.14) 2.04 (0.080) MAX. 1.40 (0.05) 1.15 (0.04) 0.94 (0.04) 0.69 (0.03) 1 3 1.32 (0.05) DIA. 6.48 (0.25) 6.23 (0.24) 2° 1.22 (0.05) 2.92 (0.11) 2.54 (0.10) TERM 2 0.10 (0.004) Base Cathode 2.89 (0.11) 2.64 (0.10) Cathode 1 4.57 (0.18) 4.32 (0.17) 5.08 (0.20) REF. 3 0.61 (0.02) MAX. Anode Conform to JEDEC outline TO-220AC Dimensions in millimeters and (inches) 10.16 (0.40) REF. 4.69 (0.18) 4.20 (0.16) 1.32 (0.05) 6.47 (0.25) 15.49 (0.61) 1.22 (0.05) 93° 6.18 (0.24) 14.73 (0.58) 2.61 (0.10) 2.32 (0.09) 8.89 (0.35) 5.28 (0.21) 4.78 (0.19) 0.55 (0.02) 0.46 (0.02) 3X 1.40 (0.055) REF. 0.93 (0.37) 0.69 (0.27) Base Cathode 2 1.14 (0.045) 2X MINIMUM RECOMMENDED FOOTPRINT 11.43 (0.45) 1 3 4.57 (0.18) 4.32 (0.17) 2 0.61 (0.02) MAX. 5.08 (0.20) REF. 8.89 (0.35) 17.78 (0.70) 3.81 (0.15) 2.08 (0.08) 2X 1 3 N/C Anode 2.54 (0.10) 2X Conform to JEDEC outline D Pak (SMD-220) Dimensions in millimeters and (inches) 2 www.irf.com 5 8TQ... Series Bulletin PD-20561 rev. D 07/03 Ordering Information Table Device Code 8 1 1 2 3 4 5 - T 2 Q 3 100 4 S 5 Essential Part Number T = TO-220 Q = Schottky Q Series Voltage Rating S = D 2Pak 080 = 80V 100 = 100V 8TQ100 ******************************************** * This model has been developed by * * Wizard SPICE MODEL GENERATOR (1999) * * (International Rectifier Corporation) * * Contain Proprietary Information * ******************************************** * SPICE Model Diode is composed by a * * simple diode plus paralled VCG2T * ******************************************** .SUBCKT 8TQ100 ANO CAT D1 ANO 1 DMOD (0.07089) *Define diode model .MODEL DMOD D(IS=1.15938021883115E-03A,N=1.95244918720315,BV=120V, + IBV=5.37891460505463A,RS= 0.00127602,CJO=9.9895753025115E-09, + VJ=2.30070034831946,XTI=2, EG=0.758916909331649) ******************************************** *Implementation of VCG2T VX 1 2 DC 0V R1 2 CAT TRES 1E-6 .MODEL TRES RES(R=1,TC1=-90.2420977904848) GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((1.635248E-02/-90.2421)*((V(2,CAT)*1E6)/(I(VX)+1E-6)1))+1)*4.011038E-03*ABS(V(ANO,CAT)))-1)} ******************************************** .ENDS 8TQ100 Thermal Model Subcircuit .SUBCKT 8TQ100 5 1 CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM1 RTHERM1 5 4 3 2 5 4 3 2 4 3 2 1 4 3 2 1 1.45E+00 4.54E+00 1.09E+01 1.01E+02 2.49E+00 5.20E-04 5.43E-01 3.05E-02 .ENDS 8TQ100 6 www.irf.com 8TQ... Series Bulletin PD-20238 rev. D 07/03 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 2 33 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 07/03 www.irf.com 7
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