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IPS521S

IPS521S

  • 厂商:

    IRF

  • 封装:

  • 描述:

    IPS521S - FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH - International Rectifier

  • 数据手册
  • 价格&库存
IPS521S 数据手册
Data Sheet No.PD 60158-H IPS521/IPS521S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • • Over temperature protection (with auto-restart) Short-circuit protection (current limit) Active clamp E.S.D protection Status feedback Open load detection Logic ground isolated from power ground Product Summary Rds(on) V clamp I Limit V open load 80mΩ (max) 50V 10A 3V Description The IPS521/IPS521S are fully protected five terminal high side switches with built in short-circuit , overtemperature, ESD protection, inductive load capability and diagnostic feedback. The output current is controlled when it reaches I lim value. The current limitation is activated until the thermal protection acts. The over-temperature protection turns off the high side switch if the junction temperature exceeds Tshutdown. It will automatically restart after the junction has cooled 7 oC below Tshutdown. A diagnostic pin is provided for status feedback of short-circuit, over-temperature and open load detection. The double level shifter circuitry allows large offsets between the logic ground and the load ground. Truth Table Op. Conditions Normal Normal Open load Open load Over current Over current Over-temperature Over-temperature In Out H H L L H H L H H L (limiting) L L H L (cycling) L L Dg H L H H L L L L Typical Connection + VCC + 5v 15K Status feedback Rdg Rin Output pull-up resistor Packages Vcc Dg Logic control Out In Gnd 5 Lead D2Pak (SMD220) IPS521S Logic signal Load Logic Gnd Load Gnd 5 Lead TO220 - IPS521 www.irf.com 1 IPS521/IPS521S Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to GROUND lead. (Tj = 25oC unless otherwise specified). Symbol Parameter Vout Voffset Vin Iin, max Vdg Idg, max Isd cont. Maximum output voltage Maximum Input voltage Maximum positive IN current Maximum diagnostic output voltage Maximum diagnostic output current Diode max. permanent current (1) (rth=62 o C/W) Isd pulsed Diode max. pulsed current (1) ESD1 Electrostatic discharge voltage (Human Body) ESD2 Pd Electrostatic discharge voltage (Machine Model) Maximum power dissipation (TC=25oC) IPS521 (TC=25oC) IPS521S Tj max. Tlead Max. storage & operating junction temp. Lead temperature (soldering 10 seconds) (1) Min. Vcc-50 -0.3 -5 -0.3 -1 — — — — — — -40 — — Max. Vcc+0.3 Vcc+0.3 7 10 7 10 2.2 10 4 0.5 40 1.56 +150 300 50 Units V mA V mA Test Conditions Maximum logic ground to load ground offset Vcc-50 A C=100pF, R=1500Ω, C=200pF, R=0Ω, L=10µH kV W o C V Vcc max. Maximum Vcc voltage Thermal Characteristics Symbol Parameter Rth Rth Rth Rth Rth 1 2 1 2 3 Thermal Thermal Thermal Thermal Thermal resistance junction to case resistance junction ambient resistance with standard footprint resistance with 1" square footprint resistance junction to case Min. — — — — — Typ. ! $ 60 35 ! Max. Units Test Conditions — — — — — TO-220 o C/W D2PAK (SMD220) (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS521/IPS521S Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Vcc VIH VIL Iout Iout Rin Rdg Continuous Vcc voltage High level input voltage Low level input voltage Continuous output current (Tamb = 85oC, Tj = 125oC, Rth = 60oC/W, ) IPS521 Continuous output current (Tamb = 85oC, Tj = 125oC, Rth = 80oC/W, ) IPS521S Recommended resistor in series with IN pin Recommended resistor in series with DG pin Min. 5.5 4 -0.3 — — 4 10 Max. 35 5.5 0.9 2.2 1.9 6 20 Units V A kΩ Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Parameter Rds(on) @Tj=25o C Min. — — — 5.5 50 — — — — — — — 0 — — 1 — 0.1 Typ. 55 55 110 — 55 56 0.9 16 0.6 20 0.15 50 — — 2.2 1.9 70 0.25 Max. Units Test Conditions 80 80 140 35 — 65 1.2 50 2 — 0.4 120 25 10 3 — 200 0.5 mΩ Vin = 5V, Iout = 5A Vin = 5V, Iout = 2.5A Vin = 5V, Iout = 5A ON state resistance Tj = 25oC ON state resistance @ Vcc = 6V ON state resistance Tj = 150oC Operating voltage range Vcc to OUT clamp voltage 1 Vcc to OUT clamp voltage 2 Body diode forward voltage Supply current when OFF Supply current when ON Ripple current when ON (AC RMS) Low level diagnostic output voltage Output leakage current Output leakage current Diagnostic output leakage current IN high threshold voltage IN low threshold voltage On state IN positive current Input hysteresis Rds(on) (V cc=6V) Rds(on) @Tj=150oC Vcc oper. V clamp 1 V clamp 2 Vf Icc off Icc on Icc ac Vdgl Ioh Iol Idg leakage V µA mA µA V µA Id = 10mA (see Fig.1 & 2) Id = Isd (see Fig.1 & 2) Id = 2.5A, Vin = 0V Vin = 0V, Vout = 0V Vin = 5V Vin = 5V Idg = 1.6 mA Vout = 6V Vout = 0V Vdg = 5.5V Vih Vil Iin, on In hyst V µA V Vin = 5V www.irf.com 3 IPS521/IPS521S Switching Electrical Characteristics Vcc = 14V, Resistive Load = 2.8Ω, Tj = 25oC, (unless otherwise specified).  Symbol Parameter Tdon Tr1 Tr2 dV/dt (on) Eon T doff Tf dV/dt (off) Eoff Tdiag Turn-on delay time Rise time to Vout = Vcc - 5V Rise time Vcc - 5V to Vout = 90% of Vcc Turn ON d V/dt Turn ON energy Turn-off delay time Fall time to V out = 10% of Vcc Turn OFF d V/dt Turn OFF energy Vout to Vdiag propagation delay Min. — — — — — — — — — — Typ. Max. Units Test Conditions 10 25 130 0.7 1500 35 25 0.9 250 5 40 60 200 2 — 70 50 3 — 15 µs See figure 3 V/ µs µJ µs V/ µs µJ µs See figure 4 See figure 6 Protection Characteristics Symbol Parameter I lim Internal current limit T sd+ Over-temp. positive going threshold T sdOver-temp. negative going threshold V sc Short-circuit detection voltage (3) Vopen load Open load detection threshold (3) Referenced to Vcc Min. 7 — — 2 2 Typ. 10 165 158 3 3 Max. Units Test Conditions 14 — — 4 4 A o C V Vout = 0V See fig. 2 See fig. 2 See fig. 2 Lead Assignments 3 (Vcc) 3 (Vcc) 1 - Ground 2 - In 3 - Vcc 4 - DG 5 - Out 12345 12345 5 Lead - TO220 IPS521 Part Number 4 5 Lead - D2PAK (SMD220) IPS521S www.irf.com IPS521/IPS521S Functional Block Diagram All values are typical VCC 50V Over temperature 165°C 158°C Tj 62 V Charge pump 2.7 V IN 7V 200 KΩ 2.2 V Level shift driver - DG 7V 40 Ω + Open load 3V Current limit + 10 A + Short-circuit - 3V GND VOUT T clamp Vin Vin 5V 0V Iout limiting Ilim. T shutdown cycling Iout ( + Vcc ) Out 0V T Tsd+ Tsd- ° ) (160 V clamp ( see Appl . Notes to evaluate power dissipation ) Figure 1 - Active clamp waveforms Figure 2 - Protection timing diagram www.irf.com 5 IPS521/IPS521S Vin Vcc 90% Vcc - 5V Vin dV/dt on Vout 10% T d on 90% Tr 1 dV/dt off Tr 2 E 1(t) Vout 10% Iout2 E 2 (t) Inductive load Iout1 E on1 R esistive load Td off Tf E on2 Figure 3 - Switching times definition (turn-on) Turn on energy with a resistive or an inductive load Figure 4 - Switching times definition (turn-off) V in Dg Vcc IN Out Gnd + Vcc Vcc -Vsc Vin Vout L 14 V - V o ut Vol R V d ia g Iout Diag on blanking Diag off blanking T diag 5v 0v Rem : V load is negative during demagnetization Figure 5 - Active clamp test circuit Figure 6 - Diagnostic delay definitions 6 www.irf.com IPS521/IPS521S 100 200% 150% 50 100% 0 0 5 10 15 20 25 30 35 50% -50 0 50 100 150 Figure 7 - Rds(on) (mΩ) Vs Vcc (V) Figure 8 - Normalized Rds(on) (%) Vs Tj (oC) 100 10 1 50 0.1 0 0 2 4 6 8 10 Figure 9 - Rds(on) (mΩ) Vs Iout (A) Figure 10 - Max. Iout (A) Vs Load Inductance (uH) www.irf.com 7 IPS521/IPS521S 10 Rthja= 10°C/W 10 Rthja= 20°C/W 1inch² footprint Rthja= 35°C/W 5 Rthja= 40°C/W 5 Free air Std. footprint Rthja= 60°C/W 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Figure 11a - Max load current (A) Vs Tamb (oC) IPS521 Figure 11b - Max load current (A) Vs Tamb (oC) IPS521S 100 15 __ TO220/SMD 220 free air - - - Rth = 5 °C/W 10 10 1 5 0.1 0.01 1E+03 1E-05 1E-04 1E-03 1E-02 1E-01 1e+00 1E+01 1E+02 0 -50 0 50 100 150 Figure 12 - Transient Thermal Impedance (oC/W) Vs Time (S) Figure 13 - Ilim (A) Vs Tj (oC) 8 www.irf.com IPS521/IPS521S 3500 3000 Resistive load 10000 1000 2500 2000 1500 1000 500 0 0 1 2 Eon Eoff 100 I=Imax vs Induct.(see fig.10) I=1.5A 10 1 1E+01 1E+02 1E+03 1E+04 1E+05 3 4 5 6 7 Figure 14 - Eon, Eoff (µJ) Vs Iout (A) Figure 15 - Eon (µJ) Vs Load Inductance (µH) (see Fig. 3) 150 125 Diag on blanking 100 75 50 25 Diag off blanking 0 0 1 2 3 1.00E-03 1.00E-04 1.00E-05 1.00E-06 0 5 10 15 20 25 30 35 Figure 16 - Diag Blanking time (µS) Vs Iout (A) (resistive load - see Fig. 6) Figure 17 - Icc (mA) Vs Vcc (V) www.irf.com 1E+06 0.1 9 IPS521/IPS521S Case Outline 5 Lead - TO220 IRGB 01-3042 01 Tape & Reel 5 Lead - D2PAK (SMD220) 01-3071 00 / 01-3072 00 10 www.irf.com IPS521/IPS521S Case Outline 5 Lead - D2PAK (SMD220) 01-3066 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd., Whyteleafe, Surrey CR3 0BL, United Kingdom Tel: ++ 44 (0) 20 8645 8000 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 8133 983 0086 IR HONG KONG: Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon Hong Kong Tel: (852) 2803-7380 Data and specifications subject to change without notice. 3/27/2000 www.irf.com 11
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