IR53HD420-P2

Preliminary Data Sheet No. PD60140J IR53H(D)420(-P2) SELF-OSCILLATING HALF BRIDGE Features • • • • • • • • • • • • • • • • Output power MOSFETs in half-bridge configuration High side gate drive designed for bootstrap operation Bootstrap diode integrated into package (HD type) Tighter initial deadtime control Low temperature coefficient deadtime 15.6V zener clamped Vcc for offline operation Half-bridge output is out of phase with RT True micropower startup Shutdown feature (1/6th VCC) on CT lead Increased undervoltage lockout hysteresis (1Volt) Lower power level-shifting circuit Lower di/dt gate drive for better noise immunity Excellent latch immunity on all inputs and outputs ESD protection on all leads Constant VO pulse width at startup Heatsink package version (P2 type) Product Summary VIN (max) Duty Cycle Deadtime (type.) Rds(on) 500V 50% 1.2µs 3.0Ω PD (TA = 25oC) 2.0W or 3.0W Package Description The IR53H(D)420(-P2) are complete high voltage, high speed, self-oscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays 7 Pin Lead SIP for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to the VIN (max) rating. Typical Connection HV DC Bus VIN IR53H(D)420(-P2) D1 1 Vcc VB 6 External Fast recovery diode D1 is not required for HD type 2 RT 3 CT 4 RT VIN 9 CT VO 7 COM TO, LOAD COM IR53H(D)420(-P2) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, unless stated otherwise. All currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VRT VCT Icc IRT dV/dt PD RthJA RthJC TJ TS TL Definition High voltage supply High side floating supply Half-bridge output RT voltage CT voltage Supply current (note 1) RT output current Peak diode recovery Package power dissipation @ TA ≤ +25°C -P2 Thermal resistance, junction to ambient Thermal resistance, junction to case (heatsink) Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) -P2 -P2 Minimum - 0.3 Vo - 0.3 -0.3 - 0.3 - 0.3 — -5 — — — — — — -55 -55 — Maximum 500 Vo + 25 VIN + 0.3 Vcc + 0.3 Vcc + 0.3 25 5 3.50 2 3 60 40 20 150 150 300 Units V mA V/ns W oC/W °C NOTE 1: This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics Section 2 IR53H(D)420(-P2) Recommended Component Values Symbol RT CT CT pin capacitor value Definition Timing resistor value Minimum 10 330 Maximum — — Units kΩ pF IR53H(D)420(-P2) RT vs Frequency IR2153 RT vs Frequency 1000000 100000 Frequency (Hz) 10000 330pf 470pF 1nF CT Values 1000 2.2nF 4.7nF 10nF 100 10 10 100 1000 RT (ohms) 10000 100000 1000000 3 IR53H(D)420(-P2) Recommended Operating Conditions The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used within the recommended conditions. Symbol VB VIN VO ID Definition High side floating supply absolute voltage High voltage supply Half-bridge output voltage Continuous drain current (TA = 25°C) -P2 (TA = 85°C) -P2 (TC = 25°C) -P2 Minimum Vo + 10 — -3.0 (note 3) — — — — — (note 3) -40 Maximum Vo + V clamp 500 500 0.7 0.85 0.5 0.6 1.2 5 125 Units V A ICC TA Supply current Ambient temperature mA °C NOTE 2: Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V. NOTE 3: Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the voltage at this lead. Electrical Characteristics VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and I IN parameters are referenced to COM. MOSFET Characteristics Symbol Definition trr Qrr Rds(on) VSD Reverse recovery time (MOSFET body diode) Reverse recovery charge (MOSFET body diode) Static drain-to-source on resistance Diode forward voltage Min. — — — — Typ. 240 0.5 3.0 0.8 Max. Units Test Conditions — — — — µC Ω V di/dt = IF=700mA 100 A/µs Dynamic Characteristics Symbol Definition D tsd RT duty cycle Shutdown propagation delay Min. — — Typ. 50 660 Max. Units Test Conditions — — % nsec fosc = 20 kHz 4 IR53H(D)420(-P2) Electrical Characteristics VBIAS (VCC, VBS) = 12V, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. Low Voltage Supply Characteristics Symbol Definition VCCUV+ VCCUVVCCUVH IQCCUV IQCC VCLAMP Rising VCC undervoltage lockout threshold Falling VCC undervoltage lockout threshold VCC undervoltage lockout Hysteresis Micropower startup VCC supply current Quiescent VCC supply current VCC zener clamp voltage Min. 8.1 7.2 0.5 — — 14.4 Typ. 9.0 8.0 1.0 75 500 15.6 Max. 9.9 8.8 1.5 150 950 16.8 Units Test Conditions V µA V VCC ≤ VCCUVICC = 5mA Floating Supply Characteristics Symbol Definition IQBSUV IQBS VBSMIN IOS VF Micropower startup VBS supply current Quiescent VBS supply current Minimum required VBS voltage for proper functionality from RT to HO Offset supply leakage current Bootstrap diode forward voltage (IR2153D) Min. — — — — 0.5 Typ. 0 30 4.0 — — Max. 10 50 5.0 50 1.0 Units µA V µA V Test Conditions VCC ≤ VCCUVV CC=VCCUV+ + 0.1V VB = VS = 600V IF = 250mA Oscillator I/O Characteristics Symbol Definition fosc d ICT ICTUV VCT+ VCTVCTSD VRT+ VRTVRTUV VRTSD Oscillator frequency RT pin duty cycle CT pin current UV-mode CT pin pulldown current Upper C T ramp voltage threshold Lower CT ramp voltage threshold CT voltage shutdown threshold High-level R T output voltage, V CC - VRT Low-level RT output voltage UV-mode RT output voltage SD-Mode RT output voltage, VCC - VRT Min. 19.4 94 48 — 0.30 — — 1.8 — — — — — — — Typ. 20 100 50 0.001 0.70 8.0 4.0 2.1 10 100 10 100 0 10 10 Max. 20.6 106 52 1.0 1.2 — — 2.4 50 300 50 300 100 50 300 Units Test Conditions kHz % uA mA V IRT = 100µA IRT = 1mA IRT = 100µA IRT = 1mA VCC ≤ VCCUVIRT = 100 µA, VCT = 0V IRT = 1mA, VCT = 0V RT = 36.9kΩ RT = 7.43kΩ fo < 100kHz VCC = 7V mV 5 IR53H(D)420(-P2) Functional Block Diagram V D1 B VIN 6 9 1 Vcc H 2 R T O IRFCXXX IR2153 C V S 7 VO L 3 C T O IRFCXXX 4 COM Fast recovery diode D1 is incorporated in IR53HDXXX only 6 IR53H(D)420(-P2) Case Outline - 7 pin 4X 5.08 (.100) 2X 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) 7 IR53H(D)420(-P2) Lead Assignments 1 2 3 4 Vcc RT CT COM 6 7 9 VB VO VIN 9 6 1 2 3 4 7 9 Lead SIP without Leads 5 and 8 Lead Definitions Symbol VCC RT CT VB VIN VO COM Lead Description Logic and internal gate drive supply voltage. Oscillator timing resistor output Oscillator timing capacitor input High side gate drive floating supply. High voltage supply Half Bridge output Logic and low side of half bridge return Vccuv+ V CLAMP Vcc RT CT V+ VO 0 Figure 1. Input/Output Timing Diagram WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2 Tel: (905) 453-2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 65 838 4630 IR TAIWAN: 16 Fl. Suite D..207, Sec.2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/22/99 8