IRF2804S-7P

PD - 96891 AUTOMOTIVE MOSFET IRF2804S-7P Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 1.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S (Pin 2, 3 ,5,6,7) G (Pin 1) Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 320 230 160 1360 330 2.2 ± 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current W W/°C V mJ A mJ °C c h d Repetitive Avalanche Energy Operating Junction and Storage Temperature Range g Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case j Parameter Typ. ––– 0.50 Max. 0.50 ––– 62 40 Units °C/W Case-to-Sink, Flat, Greased Surface Junction-to-Ambient j Junction-to-Ambient (PCB Mount, steady state) ij ––– ––– HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 9/6/04 IRF2804S-7P Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) SMD VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. Typ. Max. Units 40 ––– ––– 2.0 220 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.028 1.2 ––– ––– ––– ––– ––– ––– 170 63 71 17 150 110 105 4.5 7.5 6930 1750 970 5740 1570 2340 ––– ––– 1.6 4.0 ––– 20 250 200 -200 260 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF nH ns nC nA V mΩ V S µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 160A VDS = 10V, ID = 160A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6Ω VGS = 10V V/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 250µA e e d Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz, See Fig. 5 G D S VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 32V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 43 48 320 A 1360 1.3 65 72 V ns nC Conditions MOSFET symbol showing the integral reverse G S D Ù p-n junction diode. TJ = 25°C, IS = 160A, VGS = 0V TJ = 25°C, IF = 160A, VDD = 20V di/dt = 100A/µs e e Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited by TJmax, starting TJ = 25°C, L=0.049mH, RG = 25Ω, IAS = 160A, VGS =10V. Part not recommended for use above this value. ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%. „ Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. … Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. † This value determined from sample failure population. 100% tested to this value in production. ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ˆ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRF2804S-7P 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Current (A) 1000 BOTTOM ID, Drain-to-Source Current (A) 1000 BOTTOM 100 100 4.5V ≤ 60µs PULSE WIDTH Tj = 175°C 4.5V 10 0.1 1 ≤ 60µs PULSE WIDTH Tj = 25°C 10 100 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 240 Gfs, Forward Transconductance (S) TJ = 25°C 200 160 120 80 40 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) TJ = 175°C ID, Drain-to-Source Current (Α) 100.0 TJ = 175°C 10.0 1.0 TJ = 25°C VDS = 20V ≤ 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS = 10V 380µs PULSE WIDTH VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 3 IRF2804S-7P 14000 12000 10000 8000 6000 4000 2000 0 1 10 100 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID= 160A VGS, Gate-to-Source Voltage (V) VDS = 32V VDS= 20V 16 C, Capacitance (pF) Ciss 12 8 Coss Crss 4 0 0 50 100 150 200 250 300 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 10000 ID, Drain-to-Source Current (A) TJ = 175°C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 1000 100µsec 100 10.0 TJ = 25°C 1.0 10 1msec 10msec DC 10 100 1000 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tc = 25°C Tj = 175°C Single Pulse 0 1 0.1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF2804S-7P 350 300 ID , Drain Current (A) 2.0 250 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) RDS(on) , Drain-to-Source On Resistance (Normalized) LIMITED BY PACKAGE ID = 160A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 0.01 Ri (°C/W) τi (sec) 0.1951 0.000743 0.3050 0.008219 τ1 0.001 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2804S-7P 2500 EAS, Single Pulse Avalanche Energy (mJ) 15V 2000 VDS L DRIVER ID 21A 33A BOTTOM 160A TOP RG VGS 20V D.U.T IAS tp 1500 + V - DD A 0.01Ω 1000 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 500 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS VG QGD 4.5 VGS(th) Gate threshold Voltage (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 Charge Fig 13a. Basic Gate Charge Waveform ID = 1.0A ID = 1.0mA ID = 250µA L 0 DUT 1K VCC TJ , Temperature ( °C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 6 www.irf.com IRF2804S-7P 10000 Duty Cycle = Single Pulse 1000 Avalanche Current (A) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth 800 EAR , Avalanche Energy (mJ) 600 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f 175 ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Fig 16. Maximum Avalanche Energy vs. Temperature www.irf.com 7 IRF2804S-7P D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs VDS VGS RG 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD D.U.T. + -VDD Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF2804S-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) www.irf.com 9 IRF2804S-7P D2Pak - 7 Pin Tape and Reel IRF2804STRL-7P IRF2804STRL-7P IRF2804STRL-7P Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR’s Web site. 10 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/04 www.irf.com