IRF2805S

PD - 94428 AUTOMOTIVE MOSFET Typical Applications ● ● ● ● IRF2805S IRF2805L HEXFET® Power MOSFET D Climate Control ABS Electronic Braking Windshield Wipers Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Features ● ● ● ● ● VDSS = 55V G S RDS(on) = 4.7mΩ ID = 135AV Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D2Pak IRF2805S TO-262 IRF2805L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Single Pulse Avalanche Energy Tested ValueX Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 135V 96V 700 200 1.3 ± 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient(PCB Mounted, steady state)** Typ. ––– ––– Max. 0.75 40 Units °C/W HEXFET(R) is a registered trademark of International Rectifier. www.irf.com 1 06/10/02 IRF2805S/IRF2805L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance U Min. 55 ––– ––– 2.0 91 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.06 3.9 ––– ––– ––– ––– ––– ––– 150 38 52 14 120 68 110 4.5 7.5 5110 1190 210 6470 860 1600 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 4.7 mΩ VGS = 10V, ID = 104A T 4.0 V VDS = 10V, ID = 250µA ––– S VDS = 25V, ID = 104A 20 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, TJ = 150°C 200 VGS = 20V nA -200 VGS = -20V 230 ID = 104A 57 nC VDS = 44V 78 VGS = 10VT ––– VDD = 28V ––– ID = 104A ns ––– RG = 2.5Ω ––– VGS = 10V T D Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact S ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 44V Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Notes: Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25°C, L = 0.08mH RG = 25Ω, IAS = 104A. (See Figure 12). S ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C T Pulse width ≤ 400µs; duty cycle ≤ 2%. Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 175V showing the A G integral reverse ––– ––– 700 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0VT ––– 80 120 ns TJ = 25°C, IF = 104A ––– 290 430 nC di/dt = 100A/µs T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . V Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. W Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. X This value determined from sample failure population. 100% tested to this value in production. 2 www.irf.com IRF2805S/IRF2805L 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 ID , Drain-to-Source Current (A) 100 4.5V ID , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 10 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 T J = 25°C I D = 175A  A) 2.5 ID , Drain-to-Source Current T J = 175°C RDS(on) , Drain-to-Source On Resistance 2.0 100 (Normalized) 1.5 1.0 10 4.0 5.0 6.0 VDS = 25V 20µs PULSE WIDTH 7.0 8.0 9.0 10.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 V GS = 10V  100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF2805S/IRF2805L 10000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd =C +C ds gd 20 ID = 104A VGS , Gate-to-Source Voltage (V) VDS = 44V VDS= 28V 8000 16 C, Capacitance (pF) 6000 12 Ciss 4000 8 2000 4 Coss 0 1 10 Crss 100 0 0 40 80 120 160 200 240 Q G Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY RDS (on) ISD, Reverse Drain Current (A) T J = 175°C 100.0 ID , Drain-to-Source Current (A) 1000 10.0 100 100µsec 1msec 1.0 T J = 25°C 10 Tc = 25°C Tj = 175°C Single Pulse 1 10 10msec 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VGS = 0V 1.4 1.6 1.8 1 100 1000 VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF2805S/IRF2805L 140  LIMITED BY PACKAGE 120 VDS VGS RG RD D.U.T. + I D , Drain Current (A) 100 80 60 40 20 0 25 50 75 100 125 150 175 -VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1  PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2805S/IRF2805L 1 5V 800 EAS , Single Pulse Avalanche Energy (mJ) VDS L D R IV E R 600  ID 42.5A 73.5A BOTTOM 104A TOP RG VV 2 0GS D .U .T IA S tp 0 .0 1 Ω + - VD D A 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD -VGS(th) Gate threshold Voltage (V) 4.0 ID = 250µA 3.0 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50KΩ 12V .2µF .3µF D.U.T. VGS 3mA + V - DS 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com IRF2805S/IRF2805L 10000 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Avalanche Current (A) 100 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth 400 EAR , Avalanche Energy (mJ) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 104A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = ∆T/ ZthJC Iav = 2∆T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·t av Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com 7 IRF2805S/IRF2805L Peak Diode Recovery dv/dt Test Circuit D.U.T * + S + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer R - T + Q RG VGS • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET® power MOSFETs 8 www.irf.com IRF2805S/IRF2805L D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com 9 IRF2805S/IRF2805L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S E MBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBE R DAT E CODE YEAR 7 = 1997 WEE K 19 LINE C 10 www.irf.com IRF2805S/IRF2805L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0.3 6 8 (.0 1 4 5) 0.3 4 2 (.0 1 3 5) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 15 .4 2 (.6 0 9 ) 15 .2 2 (.6 0 1 ) 24 .3 0 (.9 5 7) 23 .9 0 (.9 4 1) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) F EE D D IR E C T IO N 1 3.50 (.53 2 ) 1 2.80 (.50 4 ) 2 7.4 0 (1.0 79 ) 2 3.9 0 (.94 1) 4 33 0 .0 0 (14 .1 7 3) M A X. 60 .0 0 (2 .3 6 2) MIN . NO TES : 1. C O M F O RM S T O E IA -4 1 8. 2. C O NT R O L LING DIM E NS IO N : M IL LIM E T E R. 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN CL UD E S F L A NG E DIS T O RT IO N @ O UT E R E D G E. 3 0.40 (1 .1 97 ) M AX. 26 .40 (1 .0 3 9 ) 24 .40 (.96 1 ) 3 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/02 www.irf.com 11