IRF3708S

PD - 93938B SMPS MOSFET Applications l IRF3708 IRF3708S IRF3708L HEXFET® Power MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power VDSS 30V RDS(on) max 12mΩ ID 62A l Benefits l l l Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3708 D2Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. 30 ±12 62 52 248 87 61 0.58 -55 to + 175 Units V V A W W W/°C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface „ Junction-to-Ambient„ Junction-to-Ambient (PCB mount)* Typ. ––– 0.50 ––– ––– Max. 1.73 ––– 62 40 Units °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 10 www.irf.com 1 8/22/00 IRF3708/3708S/3708L Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.028 8 9.5 14.5 ––– ––– ––– ––– ––– Max. Units ––– V ––– V/°C 12.0 13.5 mΩ 29 2.0 V 20 µA 100 200 nA -200 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 15A ƒ VGS = 4.5V, I D = 12A ƒ VGS = 2.8V, ID = 7.5A ƒ VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 49 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units Conditions ––– S VDS = 15V, ID = 50A ––– ID = 24.8A ––– nC VDS = 15V ––– VGS = 4.5V ƒ 21 VGS = 0V, ID = 24.8A, VDS = 15V ––– VDD = 15V ––– ID = 24.8A ns ––– RG = 0.6Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 213 62 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.88 0.80 41 64 43 70 62 A 248 1.3 ––– 62 96 65 105 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V ƒ TJ = 125°C, IS = 31A, VGS = 0V ƒ TJ = 25°C, I F = 31A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ 2 www.irf.com IRF3708/3708S/3708L 1000 VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1000 VGS 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V TOP ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 2.7V 2.7V 10 10 20µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 100 1 0.1 1 20µs PULSE WIDTH Tj = 175°C 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 62A  R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C  TJ = 175 ° C  1.5 100 1.0 0.5 10 2.0  V DS = 15V 20µs PULSE WIDTH 5.0 3.0 4.0 6.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF3708/3708S/3708L 3500 2800 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 24.8A   VDS = 15V 8 C, Capacitance (pF) Ciss  2100 6 1400 C oss 4 700 2 0 1 C rss 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 TJ = 25 ° C  I D , Drain Current (A) 100 TJ = 175 ° C   10us 100  100us 10  1ms 1 0.1 0.2 V GS = 0 V  0.8 1.4 2.0 2.6 1 0.1  TC = 25 ° C TJ = 175 ° C Single Pulse 1 10  10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF3708/3708S/3708L 70 VDS VGS RG RD 60 D.U.T. + I D , Drain Current (A) 50 -VDD 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3708/3708S/3708L Ω RDS ( on ) , Drain-to-Source On Resistance ( ) 0.025 ( RDS(on), Drain-to -Source On Resistance Ω ) 0.017 0.015 0.020 0.013 0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.011 0.009 ID = 31A 0.007 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 600 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA Charge IG ID 480 Current Sampling Resistors  ID 10A 20.7A BOTTOM 24.8A TOP Fig 14a&b. Gate Charge Test Circuit and Waveform 360 240 15V 120 V (B R )D S S tp VD S L DRIVER RG 20 V D.U .T IA S + - VD D 0 25 50 75 100 125 150 175 A IAS tp 0.0 1 Ω Starting TJ , Junction Temperature ( ° C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF3708/3708S/3708L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 ( .1 1 3 ) 2 .6 2 ( .1 0 3 ) 1 0 .5 4 ( .4 1 5 ) 1 0 .2 9 ( .4 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 4 ( .1 3 9 ) -A6 .4 7 ( .2 5 5 ) 6 .1 0 ( .2 4 0 ) -B4 .6 9 ( .1 8 5 ) 4 .2 0 ( .1 6 5 ) 1 .3 2 ( .05 2 ) 1 .2 2 ( .04 8 ) 4 1 5 .2 4 ( .6 0 0 ) 1 4 .8 4 ( .5 8 4 ) 1 .1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN 1 4 .0 9 ( .5 5 5 ) 1 3 .4 7 ( .5 3 0 ) 4 .0 6 ( .1 6 0 ) 3 .5 5 ( .1 4 0 ) 3X 1 .4 0 ( .0 5 5 ) 3X 1 .1 5 ( .0 4 5 ) 2 .5 4 ( .1 0 0 ) 2X N O TE S : 0 .93 ( .0 3 7 ) 0 .69 ( .0 2 7 ) M B AM 3X 0.5 5 ( .0 2 2 ) 0.4 6 ( .0 1 8 ) 0 .3 6 ( .0 1 4 ) 2 .9 2 ( .11 5 ) 2 .6 4 ( .10 4 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK www.irf.com 7 IRF3708/3708S/3708L D2Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F. 1.7 8 (.07 0) 1.2 7 (.05 0) 1 3 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM 0.55 (.0 22) 0.46 (.0 18) M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E PART NUM BER F530S 9 24 6 9B 1M A DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 8 www.irf.com IRF3708/3708S/3708L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com 9 IRF3708/3708S/3708L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .1 0 ( .1 6 1) 3 .9 0 ( .1 5 3) 1.60 (.06 3) 1.50 (.05 9) 0 .3 68 (.0 145 ) 0 .3 42 (.0 135 ) F E ED D IRE C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1.60 (.457 ) 1 1.40 (.449 ) 15 .4 2 (.60 9) 15 .2 2 (.60 1) 24.30 (.95 7) 23.90 (.94 1) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1.75 (.0 69 ) 1.25 (.0 49 ) 16 .1 0 (.63 4) 15 .9 0 (.62 6) 4 .7 2 (.13 6) 4 .5 2 (.17 8) F E ED D IR E CT IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 33 0.00 (14.173) M AX . 60.00 (2.362) M IN. NO TE S : 1. CO MF OR M S TO EIA-418. 2. CO N TRO LLIN G DIM ENSIO N : MILLIM ET ER . 3. DIM ENS ION MEAS URED @ HU B. 4. INC LUD ES FLAN GE DIS TO RTIO N @ OU TER ED G E. 30.40 (1.197) MA X. 26.40 (1.039) 24.40 (.961) 4 3 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB package ‚ Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 10 www.irf.com