IRF7450

PD- 93893A SMPS MOSFET Applications High frequency DC-DC converters IRF7450 HEXFET® Power MOSFET RDS(on) max 0.17Ω@VGS = 10V ID 2.5A l VDSS 200V Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l S S S G 1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 2.5 2.0 20 2.5 0.02 ± 30 11 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 www.irf.com 1 2/22/01 IRF7450 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA ƒ 0.17 Ω VGS = 10V, ID = 1.5A ƒ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 26 6.0 12 10 3.0 17 18 940 160 33 1100 66 25 Max. Units Conditions ––– S VDS = 50V, ID = 1.5A 39 ID = 1.5A 9.0 nC VDS = 160V 18 VGS = 10V, ––– VDD = 100V ––– ID = 1.5A ns ––– RG = 6.0Ω ––– VGS = 10V ƒ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy‚ Avalanche Current Typ. ––– ––– Max. 230 2.5 Units mJ A Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 97 350 2.3 A 20 1.3 146 525 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 1.5A, VGS = 0V TJ = 25°C, IF = 1.5A di/dt = 100A/µs ƒ D S ƒ 2 www.irf.com IRF7450 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP ID , Drain-to-Source Current (A) 10 ID , Drain-to-Source Current (A) 10 1 5.0V 1 0.1 5.0V 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 ID = 2.5A  RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C  10 2.0 1.5 TJ = 25 ° C  1 1.0 0.5 0.1 5.0  V DS = 50V 20µs PULSE WIDTH 7.0 7.5 5.5 6.0 6.5 8.0 0.0 -60 -40 -20 VGS = 10V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7450 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd 20 ID = 1.5A  VGS , Gate-to-Source Voltage (V) 16 C, Capacitance(pF) 1000 Ciss Coss Crss  VDS = 160V VDS = 100V VDS = 40V 12 8 100 4 10 1 10 100 1000 0 0 10 20 30 40 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) ID, Drain-to-Source Current (A) 10 TJ = 150 ° C  10 100µsec 1 TJ = 25 ° C  1 T A = 25°C T J = 150°C 0.1 Single Pulse 1 10 100 1msec 10msec 0.1 0.2 V GS = 0 V  0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7450 2.5 VDS 2.0 RD VGS RG I D , Drain Current (A) D.U.T. + 1.5 -VDD 10V 1.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 0.01 0.00001  Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10  PDM t1 t2 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7450 R DS ( on) , Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.18 0.35 0.30 0.16 VGS = 10V 0.25 0.20 0.14 ID = 1.5A 0.15 0.12 0 4 8 12 16 20 24 0.10 6 8 10 12 14 16 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. Fig 13. On-Resistance Vs. Gate Voltage 50KΩ 12V .2µF .3µF VGS QGS D.U.T. + V - DS QG QGD 600 EAS , Single Pulse Avalanche Energy (mJ) VG VGS 3mA Charge IG ID 500 Current Sampling Resistors  TOP BOTTOM ID 1.1A 1.6A 2.5A 400 Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 300 200 15 V V (B R )D S S tp VD S L DRIVE R 100 RG 20V IAS tp D .U .T IA S 0.01 Ω + V - DD 0 25 50 75 100 125 150 A Starting TJ , Junction Temperature ( °C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com IRF7450 SO-8 Package Details D -B- D IM 5 IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0 .2 5 (.0 1 0 ) M AM 5 8 E -A- 7 A1 B C D E e e1 H K 0 .1 0 (.0 0 4 ) L 8X 6 C 8X 1 2 3 4 e 6X e1 A θ θ K x 4 5° .05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0° .244 0 .01 9 .05 0 8° 1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0° 6.20 0.48 1.27 8° -C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS L θ R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF7450 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( . 484 ) 1 1.7 ( . 461 ) 8.1 ( . 318 ) 7.9 ( . 312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S ( INC HE S ) . 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.00 ( 12.992 ) M AX . 14.4 0 ( . 566 ) 12.4 0 ( . 488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board ‚ Starting TJ = 25°C, L = 73mH RG = 25Ω, IAS = 2.5A. Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.2/01 8 www.irf.com