IRF7811WPBF

PD- 95023A IRF7811WPbF HEXFET® Power MOSFET for DC-DC Converters • • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses 100% Tested for Rg Lead-Free S S S 1 2 3 4 8 7 A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811W offers particulary low RDS(on) and high Cdv/ dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. G SO-8 T o p V ie w DEVICE CHARACTERISTICS… IRF7811W RDS(on) QG Qsw Qoss 9.0mΩ 18nC 5.5nC 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS ≥ 4.5V) Pulsed Drain Current Power Dissipation TA = 25°C TL = 90°C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambientƒ Maximum Junction-to-Lead RθJA RθJL Max. 40 20 Units °C/W °C/W TJ, TSTG IS ISM TA = 25°C TL = 90°C IDM PD Symbol VDS VGS ID IRF7811W 30 ±12 14 13 109 3.1 3.0 –55 to 150 3.8 109 °C A W A Units V 08/23/05 IRF7811WPbF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 30 150 IGSS QG QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf Ciss Coss – – – (off) Min 30 Typ – 9.0 Max – 12 Units V mΩ V µA nA Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 15A‚ VDS = VGS,ID = 250µA VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100°C VGS = ±12V VGS=5.0V, ID=15A, VDS =16V VGS = 5V, VDS< 100mV VDS = 16V, ID = 15A Current* Gate-Source Leakage Current Total Gate Chg Cont FET Total Gate Chg Sync FET Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance ±100 18 15.6 6.0 1.4 4.1 5.5 12 2.0 11 11 29 9.9 2335 400 119 – – – 4.0 24 nC VDS = 16V, VGS = 0 Ω VDD = 16V, ID = 15A ns VGS = 5.0V Clamped Inductive Load pF VDS = 16V, VGS = 0 Reverse Transfer Capacitance Crss Source-Drain Rating & Characteristics Parameter Diode Forward Voltage* Reverse Recovery Charge „ Reverse Recovery Charge (with Parallel Schottky)„ VSD Qrr Qrr(s) 45 41 Min Typ Max 1.25 Units V nC nC Conditions IS = 15A‚, VGS = 0V di/dt ~ 700A/µs VDS = 16V, VGS = 0V, IS = 15A di/dt = 700A/µs (with 10BQ040) VDS = 16V, VGS = 0V, IS = 15A Notes:  ‚ ƒ „ … 2 Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS measured at VGS = 5.0V, IF = 15A. www.irf.com IRF7811WPbF 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 15A 6.0 1.5 VGS, Gate-to-Source Voltage (V) ID= 15A VDS = 16V 4.0 1.0 2.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.0 0 4 8 12 16 20 TJ , Junction Temperature ( °C) QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage RDS(on) , Drain-to -Source On Resistance ( Ω ) 0.020 4000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 3000 0.015 C, Capacitance(pF) Ciss 2000 ID = 15A 0.010 1000 Coss 0.005 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 1 Crss 10 100 VGS, Gate -to -Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3 IRF7811WPbF 100 100 I D , Drain-to-Source Current (A) TJ = 150 ° C 10 ISD , Reverse Drain Current (A) TJ = 150 ° C 10 TJ = 25 ° C 1 TJ = 25 ° C 1 0.1 2.5 V DS = 15V 20µs PULSE WIDTH 3.0 3.5 4.0 4.5 5.0 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Typical Source-Drain Diode Forward Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 PDM 1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 0.0001 t1 , Rectangular Pulse Duration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com IRF7811WPbF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9DH 6 6 i p 9 @ r r C F G ’ DI8C@T HDI H6Y $"! %'' # (' !  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CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/05 6 www.irf.com