IRFU430APBF

SMPS MOSFET PD -95076B Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l Lead-Free l IRFR430APbF IRFU430APbF RDS(on) max 1.7Ω HEXFET® Power MOSFET VDSS 500V ID 5.0A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective COSS specified (See AN 1001) l D-Pak IRFR430A I-Pak IRFU430A Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 5.0 3.2 20 110 0.91 ± 30 3.0 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 130 5.0 11 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 1.1 ––– 62 Units °C/W www.irf.com 1 03/02/07 IRFR/U430APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 2.0 ––– ––– ––– ––– Typ. ––– 0.60 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 1.7 Ω VGS = 10V, ID = 3.0A „ 4.5 V VDS = VGS, ID = 250µA 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 125°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 8.7 27 17 16 490 75 4.5 750 25 51 Max. Units Conditions ––– S VDS = 50V, ID = 3.0A 24 ID = 5.0A 6.5 nC VDS = 400V 13 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 250V ––– ID = 5.0A ns ––– RG = 15Ω ––– RD = 50Ω,See Fig. 10 „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 400V … Diode Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 5.0 showing the A G integral reverse ––– ––– 20 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V „ ––– 410 620 ns TJ = 25°C, IF = 5.0A ––– 1.4 2.1 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by ‚ Starting TJ = 25°C, L = 11mH TJ ≤ 150°C. RG = 25Ω, IAS = 5.0A. (See Figure 12) max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . ƒ ISD ≤ 5.0A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS, 2 www.irf.com IRFR/U430APbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) 10 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1 0.1 4.5V 0.1 4.5V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0.1 1 10 100 20µs PULSE WIDTH Tj = 150°C 0.01 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100.00 3.0 I D = 5.0A ID, Drain-to-Source Current (Α ) 2.5 RDS(on) , Drain-to-Source On Resistance 10.00 T J = 150°C 2.0 1.00 (Normalized) 1.5 0.10 T J = 25°C VDS = 100V 20µs PULSE WIDTH 4.0 6.0 8.0 10.0 12.0 14.0 16.0 1.0 0.5 0.01 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 10V 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U430APbF 10000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds 12 I D = 5.0A 1000 10 VDS = 400V VDS = 250V VDS = 100V C, Capacitance(pF) Ciss 100 VGS , Gate-to-Source Voltage (V) 7 Coss 10 5 Crss 1 1 10 100 1000 2 0 0 4 8 12 16 20 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain-to-Source Current (A) I SD , Reverse Drain Current (A) 10 10 100µsec 1 Tc = 25°C Tj = 150°C Single Pulse 10 100 TJ = 150 1 °C T = 25 ° C J 1msec 0.1 0.2 0.5 0.8 V GS= 0 V 1.1 1.4 10msec 1000 10000 0.1 V SD,Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFR/U430APbF 5.5 V DS 4.4 RD VGS RG D.U.T. + -VDD ID , Drain Current (A) 3.3 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.2 Fig 10a. Switching Time Test Circuit 1.1 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( ° C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 (Z thJC ) 1 D = 0.50 Thermal Response 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 +TC 1 J = P DM x Z thJC P DM t1 t2 0.1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U430APbF 15V 250 TOP ID 2.2A 3.2A 5.0A RG 20V D.U.T IAS tp EAS , Single Pulse Avalanche Energy (mJ) VDS L DRIVER 200 BOTTOM + V - DD 150 A 0.01Ω 100 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 50 0 25 50 75 100 125 150 Starting Tj, Junction Temperature ( ° C) I AS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS QGD VGS(th) Gate threshold Voltage (V) 5.0 VG 4.5 Charge 4.0 ID = 250µA Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 3.5 50KΩ 12V .2µF .3µF 3.0 D.U.T. VGS 3mA + V - DS 2.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) IG ID Current Sampling Resistors Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFR/U430APbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFR/U430APbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRF R120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 2001 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" "P" in as s embly line pos ition indicates "Lead-F ree" qualification to the consumer-level INT ERNAT IONAL RECT IF IER LOGO AS S EMBLY LOT CODE PART NUMBER IRF R120 12 116A 34 DAT E CODE YEAR 1 = 2001 WEEK 16 LINE A OR INT ERNAT IONAL RECT IF IER LOGO AS S EMB LY LOT CODE PART NUMBE R IRF R120 12 34 DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) P = DES IGNAT ES LEAD-F REE PRODUCT QUALIFIED T O T HE CONS UMER LEVEL (OPT IONAL) YEAR 1 = 2001 WEEK 16 A = AS S EMBLY S IT E CODE 8 www.irf.com IRFR/U430APbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information E XAMPL E : T H IS IS AN IR F U 120 WIT H AS S E MB L Y L OT CODE 5678 AS S E MB L E D ON WW 19, 2001 IN T H E AS S E MB L Y L INE "A" Note: "P " in as s embly line pos ition indicates L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R IRF U 120 11 9A 56 78 DAT E CODE YE AR 1 = 2001 WE E K 19 L INE A OR INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R IRF U 120 56 78 DAT E CODE P = DE S IGNAT E S L E AD-F R E E PR ODU CT (OP T IONAL ) YE AR 1 = 2001 WE E K 19 A = AS S E MB L Y S IT E CODE www.irf.com 9 IRFR/U430APbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2007 10 www.irf.com