IRGP4069PBF

PD - 97426 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4069PbF IRGP4069-EPbF C VCES = 600V IC(Nominal) = 35A G E tSC ≥ 5µs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.6V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation C C GC E TO-247AC IRGP4069PbF E GC TO-247AD IRGP4069-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 600 76 50 35 105 140 ±20 ±30 268 134 -55 to +175 Units V c A V W °C Thermal Resistance Parameter RθJC RθCS RθJA Thermal Resistance Junction-to-Case f Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.56 ––– ––– Units °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 10/02/09 IRGP4069PbF/IRGP4069-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — Typ. — 1.3 1.6 1.9 2.0 — -18 25 1.0 770 — Max. — — 1.85 — — 6.5 — — 20 — ±100 Units V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage e d d = 175°C d mV/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 35A, VGE = 15V, TJ = 25°C V V IC = 35A, VGE = 15V, TJ = 150°C IC = 35A, VGE = 15V, TJ VCE = VGE, IC = 1.0mA VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current gfe ICES IGES mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) VCE = 50V, IC = 35A, PW = 60µs S µA nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min. — — — — — — — — — — — — — — — — — — — — Typ. 69 18 29 390 632 1022 46 33 105 44 1013 929 1942 43 35 127 61 2113 197 65 Max. 104 27 44 508 753 1261 56 42 117 54 — — — — — — — — — — Units IC = 35A nC VGE = 15V VCC = 400V Conditions IC = 35A, VCC = 400V, VGE = 15V µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C IC = 35A, VCC = 400V, VGE=15V µJ RG=10Ω, L=200µH, LS=150nH, TJ = 175°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200µH, LS = 150nH TJ = 175°C pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 140A VCC = 480V, Vp =600V Rg = 10Ω, VGE = +20V to 0V FULL SQUARE 5 — — µs VCC = 400V, Vp =600V Rg = 10Ω, VGE = +15V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 19µH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRGP4069PbF/IRGP4069-EPbF 80 70 60 50 40 30 20 10 0 25 50 75 100 T C (°C) 125 150 175 300 250 200 Ptot (W) IC (A) 150 100 50 0 25 50 75 100 T C (°C) 125 150 175 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 100µsec 10µsec 100 IC (A) 10 1msec DC IC (A) 10 1 1000 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VCE (V) 100 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 140 120 100 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V ICE (A) 80 60 40 20 0 0 2 4 VGE = 10V VGE = 8.0V 6 8 10 0 2 4 6 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60µs VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60µs VCE (V) www.irf.com 3 IRGP4069PbF/IRGP4069-EPbF 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 18 16 14 VCE (V) ICE (A) 80 60 40 20 0 0 12 10 8 6 4 2 0 ICE = 18A ICE = 35A ICE = 70A 2 4 6 8 10 5 10 VGE (V) 15 20 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60µs 20 18 16 14 20 18 16 14 Fig. 8 - Typical VCE vs. VGE TJ = -40°C VCE (V) VCE (V) 12 10 8 6 4 2 0 5 10 ICE = 18A ICE = 35A ICE = 70A 12 10 8 6 4 2 0 ICE = 18A ICE = 35A ICE = 70A 15 VGE (V) 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = 25°C 140 IC, Collector-to-Emitter Current (A) Fig. 10 - Typical VCE vs. VGE TJ = 175°C 4000 3500 120 100 80 60 40 20 0 4 5 6 7 8 9 10 11 12 13 14 VGE, Gate-to-Emitter Voltage (V) T J = 175°C TJ = 25°C 3000 Energy (µJ) 2500 2000 1500 1000 500 0 0 10 20 30 EON EOFF 40 50 60 70 IC (A) Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 60µs Fig. 12 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 4 www.irf.com IRGP4069PbF/IRGP4069-EPbF 1000 3000 2500 Swiching Time (ns) EON Energy (µJ) tdOFF 100 tF 2000 EOFF 1500 tdON tR 10 0 10 20 30 40 50 60 70 IC (A) 1000 500 0 25 50 Rg ( Ω) 75 100 Fig. 13 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 Fig. 14 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V 20 Isc 15 300 Swiching Time (ns) Tsc 225 Current (A) Time (µs) tdOFF 100 tF 10 150 tdON 5 tR 10 0 10 20 30 40 50 RG ( Ω) 75 0 8 10 12 14 16 18 VGE (V) 0 Fig. 15 - Typ. Switching Time vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V 10000 Fig. 16 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C Cies Capacitance (pF) 1000 100 Coes Cres 10 0 100 200 300 400 500 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz www.irf.com 5 IRGP4069PbF/IRGP4069-EPbF 16 VGE, Gate-to-Emitter Voltage (V) 14 12 10 8 6 4 2 0 0 10 20 VCES = 400V VCES = 300V 30 40 50 60 70 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 35A; L = 740µH 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.01041 0.15911 0.23643 0.15465 0.000006 0.002035 τi (sec) 0.01 0.02 0.01 0.000142 0.013806 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 6 www.irf.com IRGP4069PbF/IRGP4069-EPbF L L 0 DUT 1K VCC 80 V + - DUT Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC DUT VCC -5V DUT / DRIVER Rg VCC SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= V CC ICM 100K D1 DUT Rg 22K C sens e VCC G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit www.irf.com 7 IRGP4069PbF/IRGP4069-EPbF 600 500 400 90% ICE 60 tf 50 40 30 20 5% V CE 600 500 400 ICE (A) TEST CURRENT 60 50 40 30 tr VCE (V) V CE (V) 200 100 0 Eoff Loss 200 100 0 -100 6.4 6.6 6.8 10% test current 90% test current 5% V CE 20 10 0 -10 5% ICE 10 0 -10 -100 -0.5 Eon Loss 7 7.2 0 0.5 1 1.5 2 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 700 600 500 400 Vce (V) 300 200 100 0 -100 -4.5 VCE ICE 350 300 250 200 150 100 50 0 -50 0.5 5.5 Time (uS) Fig. WF3 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 10.5 8 ICE (A) www.irf.com ICE (A) 300 300 IRGP4069PbF/IRGP4069-EPbF Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S ,5)3( DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRGP4069PbF/IRGP4069-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/09 10 www.irf.com