IRHNJ53230

PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.20Ω 0.20Ω 0.20Ω 0.25Ω ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4#  TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 13 8.2 52 75 0.6 ±20 60 13 7.5 4.4 -55 to 150 300 ( for 5s ) 1.0 ( Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 07/22/02 IRHNJ57230 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — 2.0 10 — — — — — — — — — — — — Typ Max Units — 0.26 — — — — — — — — — — — — — — 4.0 — — 0.2 4.0 — 10 25 100 -100 50 7.4 20 25 100 35 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 8.2A ➃ VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 8.2A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 13A VDS = 100V VDD = 100V, ID = 13A, VGS =12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1043 190 20 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 13 52 1.2 343 2.25 Test Conditions A V ns µC Tj = 25°C, IS = 13A, VGS = 0V ➃ Tj = 25°C, IF = 13A, di/dt ≤100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 6.9 1.67 — °C/W Test Conditions soldered to a 2” square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ57230 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-.5) Diode Forward Voltage ➃ Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 200 2.0 — — — — — — — 4.0 100 -100 10 0.204 0.2 1.2 200 1.5 — — — — — — — 4.0 100 -100 25 0.255 0.25 1.2 V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID = 8.2A VGS = 12V, ID = 8.2A VGS = 0V, IS = 13A 1. Part numbers IRHNJ57230, IRHNJ53230 and IRHNJ54230 2. Part number IRHNJ58230 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.4 82.3 Energy (MeV) 309 341 350 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 150 150 50 32.5 200 200 40 35 30 28.4 50 35 25 — — 250 200 VDS 150 100 50 0 0 -5 -10 VGS -15 -20 Br I Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ57230 Pre-Irradiation 100 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 10  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 5.0V 5.0V 1 1 0.1 0.1 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 0.1 0.1 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C  TJ = 150 ° C  ID = 13A  2.0 1.5 10 1.0 0.5 1 5.0 15  V DS = 50V 20µs PULSE WIDTH 8.0 9.0 6.0 7.0 10.0 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNJ57230 2000 1600 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 13A  16  VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) 1200 Ciss  12 800 C oss 8 400 C rss 1 10 100 4 0 0 0 10 20 FOR TEST CIRCUIT  SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) 10 I D , Drain Current (A) TJ = 150 ° C  100  10us 10 TJ = 25 ° C  1  100us  1ms 1 0.1 0.4 V GS = 0 V  0.6 0.8 1.0 1.2 0.1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100  10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNJ57230 Pre-Irradiation 15 VDS VGS RD 12 D.U.T. + I D , Drain Current (A) RG -VDD 9 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ57230 100 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 80  TOP BOTTOM ID 5.8A 8.2A 13A VD S L D R IV E R 60 RG D .U .T. IA S tp + - VD D A 40 VGS 20V 0 .0 1 Ω 20 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 V (B R )D S S tp Starting T , Junction Temperature ( °C) J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNJ57230 Pre-Irradiation Footnotes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L= 0.67 mH Peak IL = 13A, VGS = 12V ➂ ISD ≤ 13A, di/dt ≤ 274A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/02 8 www.irf.com