IRL3715ZPBF

PD - 95581 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET IRL3715ZPbF IRL3715ZSPbF IRL3715ZLPbF 11m: VDSS RDS(on) max 20V Qg 7.0nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB IRL3715Z D2Pak IRL3715ZS TO-262 IRL3715ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 50 36 200 45 23 0.30 -55 to + 175 Units V A ™ h h Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw W W/°C °C f 300 (1.6mm from case) 10 lbf in (1.1N m) y y Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 3.33 ––– 62 40 Units °C/W fà f ––– 0.50 ––– ––– Junction-to-Ambient (PCB Mount) g Notes  through † are on page 12 www.irf.com 1 07/20/04 IRL3715Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units 20 ––– ––– ––– 1.65 ––– ––– ––– ––– ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.014 9.2 12.4 2.1 -5.2 ––– ––– ––– ––– ––– 7.0 2.1 0.9 2.3 1.7 3.2 3.7 7.1 44 11 4.6 870 270 140 ––– ––– 11 15.5 2.55 ––– 1.0 150 100 -100 ––– 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 10V ns nC nC VDS = 10V VGS = 4.5V ID = 12A S nA V mV/°C µA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A e e VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 10V, ID = 12A See Fig. 16 VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V ID = 12A Clamped Inductive Load e ƒ = 1.0MHz Avalanche Characteristics EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Ù d Typ. ––– ––– ––– Max. 44 12 4.5 Units mJ A mJ Repetitive Avalanche Energy ™ ––– ––– ––– ––– ––– ––– ––– ––– 9.1 2.2 Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units 50 h Conditions MOSFET symbol D A 200 1.0 14 3.3 V ns nC Ù showing the integral reverse G S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VDD = 10V di/dt = 100A/µs e e 2 www.irf.com IRL3715Z/S/LPbF 1000 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 1000 ID, Drain-to-Source Current (A) 100 ID, Drain-to-Source Current (A) 100 VGS 10V 9.0V 7.0V 5.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 10 3.0V 3.0V 60µs PULSE WIDTH Tj = 25°C 1 0.1 1 10 60µs PULSE WIDTH Tj = 175°C 1 0.1 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (Α) ID = 30A VGS = 10V T J = 25°C 100 1.5 T J = 175°C 1.0 VDS = 10V 60µs PULSE WIDTH 10 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRL3715Z/S/LPbF 10000 12 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd ID= 12A 10 8 6 4 2 0 VDS= 20V VDS= 10V C, Capacitance (pF) 1000 Ciss Coss Crss 100 1 10 100 0 4 8 12 16 VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.0 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.0 T J = 175°C 10.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100µsec 10 1msec 10msec 1 10 100 1.0 T J = 25°C VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V) 1 Tc = 25°C Tj = 175°C Single Pulse 0 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRL3715Z/S/LPbF 60 LIMITED BY PACKAGE 50 ID , Drain Current (A) 2.6 VGS(th) Gate threshold Voltage (V) 2.2 40 30 20 10 0 25 50 75 100 125 150 175 1.8 ID = 250µA 1.4 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T C , Case Temperature (°C) T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Threshold Voltage vs. Temperature 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ Ri (°C/W) τi (sec) 0.942 0.000145 0.982 0.406 0.000805 0.004757 τ1 τ2 0.01 Ci= τi /Ri Ci= τi/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL3715Z/S/LPbF 15V 200 EAS, Single Pulse Avalanche Energy (mJ) VDS L DRIVER 160 ID 3.9A 5.4A BOTTOM 12A TOP RG 20V VGS D.U.T IAS tp + V - DD 120 A 0.01Ω 80 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 40 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS LD VDS Fig 12b. Unclamped Inductive Waveforms + VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 50KΩ 12V .2µF .3µF Current Regulator Same Type as D.U.T. Fig 14a. Switching Time Test Circuit D.U.T. + V - DS VDS 90% VGS 3mA 10% IG ID Current Sampling Resistors VGS td(on) tr td(off) tf Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 www.irf.com IRL3715Z/S/LPbF D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRL3715Z/S/LPbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; Synchronous FET The power loss equation for Q2 is approximated by; * Ploss = Pconduction + P + Poutput drive Ploss = Irms × Rds(on) + ( g × Vg × f ) Q ( 2 ) Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎝2 ⎠ *dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝2 ⎠ ⎞ ⎞⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Qoss Characteristic 8 www.irf.com IRL3715Z/S/LPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IRF 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB L Y L OT CODE PART NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C www.irf.com 9 IRL3715Z/S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IR F 530S WIT H L OT CODE 8024 AS S EMB L ED ON WW 02, 2000 IN T HE AS S E MBL Y L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IFIER L OGO AS S E MB L Y L OT CODE PAR T NU MB ER F 530S DAT E CODE YE AR 0 = 2000 WEE K 02 L INE L OR INT E R NAT IONAL RE CT IF IE R L OGO PART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S LE AD-F RE E PR ODUCT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE AS S E MB LY LOT CODE 10 www.irf.com IRL3715Z/S/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE : T HIS IS AN IRL3103L LOT CODE 1789 AS S EMB LE D ON WW 19, 1997 IN THE AS S EMB LY LINE "C" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT E RNATIONAL RE CT IF IER LOGO AS S EMBLY LOT CODE PART NUMB ER DATE CODE YE AR 7 = 1997 WE E K 19 LINE C OR INT ERNAT IONAL RECT IFIE R LOGO AS S E MB LY LOT CODE PART NUMBE R DAT E CODE P = DE S IGNAT E S LEAD-FREE PRODUCT (OPT IONAL) YE AR 7 = 1997 WE EK 19 A = AS S EMB LY S IT E CODE www.irf.com 11 IRL3715Z/S/LPbF TRR D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.61mH, RG = 25Ω, IAS = 12A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This is only applied to TO-220AB pakcage. … This is applied to D2Pak, when mounted on 1" square PCB (FR4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. † Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/