IRLL3303PBF

PD- 95223 IRLL3303PbF Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description l HEXFET® Power MOSFET D VDSS = 30V G S RDS(on) = 0.031Ω ID = 4.6A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. S O T -22 3 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current  Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. 6.5 4.6 3.7 37 2.1 1.0 8.3 ± 16 140 4.6 0.10 1.3 -55 to + 150 Units A W W mW/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJA RθJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 93 48 Max. 120 60 Units °C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 04/27/04 IRLL3303PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.0 5.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.034 ––– ––– ––– ––– ––– ––– ––– ––– 34 4.4 10 7.2 22 33 28 840 340 170 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.031 VGS = 10V, ID = 4.6A „ Ω 0.045 VGS = 4.5V, ID = 2.3A „ ––– V VDS = VGS, ID = 250µA ––– S VDS = 10V, ID = 2.3A 25 VDS = 30V, VGS = 0V µA 250 VDS = 24V, VGS = 0V, TJ = 125°C -100 VGS = -16V nA 100 VGS = 16V 50 ID = 4.6A 6.5 nC VDS = 24V 16 VGS = 10V, See Fig. 6 and 9 „ ––– VDD = 15V ––– ID = 4.6A ns ––– R G = 6.2Ω ––– R D = 3.2Ω, See Fig. 10 „ ––– VGS = 0V ––– pF VDS = 25V ––– ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol ––– ––– 0.91 showing the A integral reverse ––– ––– 37 p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 4.6A, VGS = 0V „ ––– 65 98 ns TJ = 25°C, IF = 4.6A ––– 160 240 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Specification changes Rev. # 1 1 Notes: Parameters VGS(th) (Max.) VGS (Max.) Old spec. 2.5V ±20 New spec. No spec. ±16 Comments Removed V GS(th) (Max). Specification Decrease VGS (Max). Specification Revision Date 11/1/96 11/1/96  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ƒ ISD ≤ 4.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ VDD = 15V, starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = 4.6A. (See Figure 12) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRLL3303PbF 100 V GS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOT TOM 3.0V TO P 100 I D , D rain-to-Source C urrent (A) 10 I D, D rain-to-Source C urrent (A ) VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 3 .0V 3 .0V 1 0.1 1 2 0 µ s P U LS E W ID TH TJ = 2 5°C A 10 1 0.1 1 2 0 µ s P U L S E W ID TH TJ = 15 0°C A 10 V D S , D rain-to-S ourc e V olta g e ( V ) V D S, D rain-to-S ource V olta g e (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D = 4 .6A I D , D rain-to-So urce C urren t (A ) 1.5 TJ = 2 5 °C TJ = 1 5 0 ° C 10 1.0 0.5 1 3.0 3.5 4.0 V DS= 10V 2 0 µ s P U L S E W ID T H 4.5 5.0 5.5 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 A V G S , G a te -to -S o u rc e V o lta g e (V ) T J , Junction T em perature (°C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLL3303PbF 1600 1400 20 V G S , G ate-to-Source V oltage (V ) C i ss C , Capacitance (pF) 1200 1000 800 600 400 200 0 1 V GS C iss C rs s C o ss = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d I D = 4.6 A V D S = 2 4V V D S = 1 5V 16 C o ss 12 8 C r ss 4 A 10 100 0 0 10 20 F O R TE S T C IR C U IT S E E F IG U R E 9 30 40 50 A V D S , D rain-to-S ourc e V olta g e ( V ) Q G , T otal G ate C har g e ( nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 I S D , R everse Drain C urrent (A ) O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) 100µs 10 10 TJ = 1 5 0°C T J = 2 5°C 1m s 1 0.4 0.6 0.8 1.0 V G S = 0V 1.2 A 1 T A = 2 5 °C T J = 15 0°C S in g le P u lse 0.1 1 10 10m s 1.4 A 100 V S D , S ourc e-to-D rain V olta g e ( V ) V D S , D rain-to-S ource V olta g e ( V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLL3303PbF QG VDS VGS RD 10V VG QGS QGD D.U.T. + RG - VDD 10V Charge Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50KΩ 12V .2µF .3µF 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Fig 10b. Switching Time Waveforms T herm al R es pons e (Z th J A ) 100 D = 0 .5 0 0 .2 0 10 0 .1 0 0 .0 5 0 .02 1 0 .01 PD M t 0.1 S IN G L E P U L S E (TH E R M A L R E S P O N S E ) 1 t2 N o te s : 1 . D u ty fac t or D = t 1 /t 2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J A + T A A 10000 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , R e cta n g u la r P u lse D u ra tio n (se c ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRLL3303PbF 350 E A S , S ingle P ulse A valanche E nergy (m J) TO P 300 1 5V B O TTO M 250 ID 2.1 A 3.7A 4 .6 A VD S L D R IV E R 200 RG 20V D .U .T IA S tp 0 .01 Ω + - VD D 150 A 100 Fig 12a. Unclamped Inductive Test Circuit 50 0 V DD = 15 V 25 50 75 100 125 A 150 V (B R )D SS tp S tartin g T J , J unc tion T em p erature ( °C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRLL3303PbF Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS www.irf.com 7 IRLL3303PbF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNATIONAL RECTIF IER LOGO PART NUMBER LOT CODE AXXXX FL014 314P A = ASS EMBLY SITE DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNATES LEAD-F REE PRODUCT (OPT IONAL) TOP BOTT OM 8 www.irf.com IRLL3303PbF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 4 ) 0 .3 5 ( .0 1 3 ) 0 .2 5 ( .0 1 0 ) TR 2 .0 5 ( .0 8 0 ) 1 .9 5 ( .0 7 7 ) 1 .8 5 ( .0 7 2 ) 1 .6 5 ( .0 6 5 ) 7 .5 5 ( .2 9 7 ) 7 .4 5 ( .2 9 4 ) 7 .6 0 ( .2 9 9 ) 7 .4 0 ( .2 9 2 ) 1 .6 0 ( .0 6 2 ) 1 .5 0 ( .0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 ( .4 7 5 ) 1 1 .9 0 ( .4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 ( 1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 ( .5 1 9 ) 1 2 .8 0 ( .5 0 4 ) 1 5 .40 ( .6 0 7 ) 1 1 .90 ( .4 6 9 ) 4 7 .1 0 ( .2 7 9 ) 6 .9 0 ( .2 7 2 ) 1 6 .3 0 ( .6 4 1 ) 1 5 .7 0 ( .6 1 9 ) 2 .3 0 ( .0 9 0 ) 2 .1 0 ( .0 8 3 ) 330.00 ( 13.000 ) M AX. 5 0.00 ( 1 .9 6 9 ) M IN . NO TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) 3 1 8 .4 0 ( .72 4 ) M AX . 4 Data and specifications subject to change without notice. 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