RT3WLMM

PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION RT3WLMM is a composite transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION For low frequency amplify application 0.65 0.65 0～0.1 Tr1 Tr2 TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥：COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC（Total） Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Ta=25℃） Junction temperature Storage temperature RATING Tr1 50 6 50 200 150 ＋125 -55～＋125 Tr2 60 UNIT V V V mA mW ℃ ℃ MARKING 6 5 4 . １ WL M 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)CEO ICBO IEBO hFE* hFE VCE(sat) fT Cob NF Parameter Collector to Emitter break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain Collector to Emitter saturation voltage Gain band width product Collector output capacitance Noise figure Test conditions IC=100μA,RBE=∞ VCB =50V,IE=0 VEB=6V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=0.1mA IC=100mA,IB=10mA VCE=6V,IE=-10mA (Tr1) VCB=6V,IE=0,f=1MHZ (Tr2) VCB=-6V,IE=0,f=1MHZ (Tr1) VCE=6V,IE=-0.1mA,f=1kHZ,RG=2kΩ (Tr2) VCE=-6V,IE=0.3mA,f=100HZ,RG=10kΩ Limits Min 50 150 90 Typ 200 2.5 4.0 E 150～300 Max 0.1 0.1 500 0.3 - Unit V μA μA V MHZ pF Item hFE 15 20 F dB * : It shows hFE classification in right table. 250～500 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS （Tr1） COMMON EMITTER OUTPUT 50 0.16mA 50 0.14mA 0.12mA 0.10mA 30 0.08mA 0.06mA 0.04mA 10 0.02mA IB=0 0 0 1 2 3 4 5 COLLECTOR EMITTER VOLTAGE VCE(V) Ta=25℃ COLLECTOR CURRENT IC(mA) 40 Ta=25℃ VCE=6V COMMON EMITTER TRANSFER COLLECTOR CURRENT IC(mA) 40 30 20 20 10 0 0 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) 1 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE GAIN BAND WIDTH PRODUCT fT(MHz) 250 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=6V 200 Ta=25℃ VCE=6V 100(@IC=1mA) 1000 150 100 100 10 50 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz 10 0 -0.1 -1 -10 EMITTER CURRENT IE(mA) -100 1 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type TYPICAL CHARACTERISTICS （Tr2） COMMON EMITTER OUTPUT -50 -50 COMMON EMITTER TRANSFER 0.18mA 0.16mA Ta=25℃ 0.14mA 0.12mA COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=-6V -40 -40 COLLECTOR CURRENT IC(mA) -30 0.10mA 0.08mA -30 -20 0.06mA 0.04mA -20 -10 0.02mA IB=0 -10 -0 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V) -0 -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) -1.0 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=-6V 100(@IC=-1mA) 1000 250 Ta=25℃ VCE=-6V 200 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT GAIN BAND WIDTH PRODUCT fT(MHz) 150 100 100 10 50 1 -0.1 0 -1 -10 -100 COLLECTOR CURRENT IC(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE -1000 0.1 1 10 EMITTER CURRENT IE(mA) 100 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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