RT3XBBM

RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3XBBM is a composite transistor with built-in bias resistor 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE ●Built-in bias resistor ( R1=10 KΩ) 2.0 ●Mini package for easy mounting APPLICATION muting circuit、switching circuit 0.65 0.65 ⑥ 0～0.1 ⑤ R1 R2 ④ RTr1 RTr2 R1 ① ② ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATINGS Symbol VCBO VEBO VCEO I C （Ta=25℃）（RTr1、RTr2） Parameter Ratings 40 40 20 400 150 ＋150 -55～＋150 Unit V V V mA mW ℃ ℃ 6 5 4 MARKING Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Total Ta=25℃） Junction temperature Storage temperature PC Tj Tstg . .ＸＢＢ １ 2 3 ISAHAYA ELECTRONICS CORPORATION 0.13 0.9 RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type Electrical characteristics（Ta=25℃） Symbol VCBO VEBO VCEO ICBO IEBO ｈＦＥ VCE(sat) R1 fT Ron Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency Output On-resistance V CE Test conditions ＩC=50μA , IE=0mA IE=50μA , C=0mA IC=1mA , RBE=∞ VCB=40V , IE=0mA VEB=40V , IC=0mA VCE=5V , IC=-10mA IC=10mA , IB=0.5mA =10V, I E=-10mA, f=100MHz Limits Min 40 40 20 0.5 0.5 820 10 7 10 35 0.94 13 2500 Typ Max Unit V V V μA μA mV KΩ MHz Ω V I=7V, f=1MHz TYPICAL CHARACTERISTICS (Tr1、Tr2) INPUT ON VOLTAGE VS. COLLECTOR CURRENT 100 VCE=0.2V INPUT ON VOLTAGE VI(ON) (V) COLLECTOR CURRENT IC (uA) 1000 VCE=5V COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 10 Ta=-40℃ 25℃ 75℃ 100 Ta=-40℃ 25℃ 75℃ 1 0.1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) 10 0 0.2 0.4 0.6 0.8 1 INPUT OFF VOLTAGE VI(OFF) (V) ISAHAYA ELECTRONICS CORPORATION RT3XBBM Composite Transistor For Muting Application Silicon NPN Epitaxial Type 10000 DC FORWARD CURRENT GAIN hFE DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 75℃ DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT 10000 DC REVERSE CURRENT GAIN hFER VCE=5V 75℃ VEC=5V 1000 25℃ 1000 100 Ta=-40℃ 100 25℃ Ta=-40℃ 10 10 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) IC/IB=20 100 75℃ ON RESISTANCE VS. INPUT VOLTAGE 100 f=1kHz RL=1kΩ ON RESISTANCE Ron(Ω) Ta=-40℃ 10 25℃ 75℃ 10 25℃ 1 1 Ta=-40℃ 0.1 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) 0.1 0.1 1 10 100 INPUT VOLTAGE VI(V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan K eep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. N otes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is h prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jun.2008