2N3791

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION 2N3791 2N3792 ·With TO-3 package ·Complement to type 2N3715 ,2N3716 ·Excellent safe operating area APPLICATIONS Designed for medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2N3791 VCBO Collector-base voltage 2N3792 2N3791 VCEO Collector-emitter voltage 2N3792 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -7 -10 -4 150 200 -65~200 V A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N3791 VCEO(SUS) Collector-emitter sustaining voltage 2N3792 Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage 2N3791 ICEX Collector cut-off current 2N3792 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency IC=-5A; IB=-0.5A IC=-5A ; VCE=-2V IC=-10A ; VCE=-4V VCE=-60V; VBE(off)=-1.5V TC=150℃ VCE=-80V; VBE(off)=-1.5V TC=150℃ VEB=-7V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-0.5A;VCE=-10V 50 30 4 IC=-0.2A ;IB=0 -80 CONDITIONS MIN -60 2N3791 2N3792 TYP. MAX UNIT V V VCE(sat) VBE(on)-1 VBE(on)-2 -1.0 -1.8 -4.0 -1.0 -5.0 -1.0 -5.0 -5.0 180 V V V mA mA mA MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N3791 2N3792 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3