2N5157

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 700 500 7 3.5 100 165 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N5157 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.5A 1.2 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.5A VCB=700V; IE=0 TC=125℃ VCE=500V; IB=0 1.5 0.2 2.0 5.0 V ICBO Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 30 90 fT Transition frequency IC=1A ; VCE=10V;f=5.0MHz 2.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5157 Fig.2 Outline dimensions 3