2N5630

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N5629 Collector-base voltage 2N5630 2N5629 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5630 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 7 16 20 5.0 200 200 -65~200 V A A A W ℃ ℃ Open emitter 120 100 V CONDITIONS VALUE 100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5629 IC=0.2A ;IB=0 2N5630 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2N5629 2N5630 ICEV IEBO Collector cut-off current Emitter cut-off current 2N5629 hFE-1 DC current gain 2N5630 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=16A ; VCE=2V IE=0 ; VCB=10V ;f=0.1MHz IC=1A ; VCE=20V 1.0 IC=8A ; VCE=2V 20 4 500 pF MHz 80 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 VCE=50V; IB=0 1.0 VCE=60V; IB=0 VCE=ratedVCB; VBE(off)=1.5V TC=150℃ VEB=7V; IC=0 25 1.0 5.0 1.0 100 mA mA mA 120 1.0 2.0 1.8 1.5 1.0 V V V V mA CONDITIONS MIN 100 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage ICEO Collector cut-off current 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5629 2N5630 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3