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2N5875

2N5875

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2N5875 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2N5875 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5875 2N5876 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5875 VCBO Collector-base voltage 2N5876 2N5875 VCEO Collector-emitter voltage 2N5876 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -80 -5 -10 -20 -4 150 200 -65~200 V A A A W ℃ ℃ Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5875 2N5876 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5875 IC=-0.2A ;IB=0 2N5876 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current 2N5875 ICEO Collector cut-off current 2N5876 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=-40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150℃ VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-4A ; VCE=-4V IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V;f=1MHz 35 20 4 4 MHz 100 -0.5 -5.0 -1.0 mA mA IC=-5A;IB=-0.5A IC=-10A;IB=-2.5A IC=-10A;IB=-2.5A IC=-4A ; VCE=-4V VCB=ratedVCBO; IB=0 VCE=-30V; IB=0 -1.0 mA -80 -1.0 -3.0 -2.5 -1.5 -0.5 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5875 2N5876 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3
2N5875 价格&库存

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