2N5972

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipations APPLICATIONS ・Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5972 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 80 5 15 30 5 150 150 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat ICEO ICEV ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ;IB=0 IC=7A ;IB=0.7A IC=15A; IB=3.75A IC=15A; IB=3.75A VCE=40V; IB=0 VCE=100V; VBE(off)=1.5V TC=150℃ VCB=100V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=1.5V IC=15A ; VCE=4V IC=1A;VCE=10V 25 4 4 MHz MIN 80 1.0 4.0 2.5 1.0 0.5 5.0 0.5 1.0 75 TYP. MAX UNIT V V V V mA mA mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N5972 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3