2N6049

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION ·With TO-66 package ·Complement to type 2N3054A APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -90 -55 -7 -4 -10 -2 75 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.33 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6049 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0 -55 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA IC=-4A; IB=-0.8A -0.5 V Collector-emitter saturation voltage -2.0 V VBE Base -emitter on voltage IC=-0.5A ; VCE=-4V VCE=-90V;VBE(off)=-1.5V TC=150℃ VCE=-30V; IB=0 -1.0 -1.0 -6.0 -0.5 V ICEX Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 hFE-2 DC current gain IC=-0.5A ; VCE=-4V IC=-3A ; VCE=-4V 25 100 DC current gain 6 COB Output capacitance IE=0 ; VCB=-10V,f=0.1MHz 200 pF fT Transition frequency IC=-0.2A ; VCE=-10V;f=1MHz 3.0 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6049 Fig.2 Outline dimensions 3