2N6056

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6055 2N6056 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N6055 Collector-base voltage 2N6056 2N6055 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6056 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 80 5 8 16 120 100 200 -65~200 V A A mA W ℃ ℃ Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tm=25℃ unless otherwise specified SYMBOL PARAMETER 2N6055 IC=0.1 A ;IB=0 2N6056 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltge Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6055 ICEO Collector cut-off current 2N6056 2N6055 ICEX Collector cut-off current 2N6056 IEBO hFE-1 hFE-2 Cob Emitter cut-off current DC current gain DC current gain Output capacitance VCE=40V; IB=0 VCE=60V; VBE(off)=1.5V TC=150℃ VCE=80V; VBE(off)=1.5V TC=150℃ VEB=5V; IC=0 IC=4A ; VCE=3V IC=8A ; VCE=3V IE=0;VCB=10V;f=0.1MHz IC=4A ;IB=16mA IC=8A ;IB=80mA IC=8A ;IB=80mA IC=4A ; VCE=3V VCE=30V; IB=0 CONDITIONS 2N6055 2N6056 MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 2.0 3.0 4.0 2.8 V V V V 0.5 mA 0.5 5.0 mA 0.5 5.0 2.0 750 100 220 pF 18000 mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6055 2N6056 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3