2N6103

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ・With TO-220 package ・2N6102 type with short pin APPLICATIONS ・For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 45 45 8 16 75 150 -65~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6102 2N6103 MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 45 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=5A 3.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=15A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150℃ VEB=8V; IC=0 3.5 0.5 2.0 1.0 V ICBO Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=8A ; VCE=4V 15 80 hFE-2 DC current gain IC=15A ; VCE=4V 5 fT Transition frequency IC=1A ; VCE=10V 0.8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6102 2N6103 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3