Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6226 2N6227 2N6228
DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N6226 VCBO Collector-base voltage 2N6227 2N6228 2N6226 VCEO Collector-emitter voltage 2N6227 2N6228 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -6 150 150 -65~200 V A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.92 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER
2N6226 2N6227 2N6228
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6226 Collector-emitter sustaining voltage
-100
VCEO(SUS)
2N6227
IC=-0.2A ;IB=0
-120
V
2N6228
-140
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.2
V
VBE
Base-emitter on voltage
IC=-3A ; VCE=-2V
-1.8
V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
-5.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0 2N6226 25
-0.1
mA
100
hFE
DC current gain
2N6227
IC=-3A ; VCE=-2V
20
80
2N6228
15
60
fT
Transition frequency
IC=-0.5A ; VCE=-4V
1
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6226 2N6227 2N6228
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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