2N6261

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・Series and shunt-regulator driver and output stages ・High-fidelity amplifers ・Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6261 Fig.1 simplified outline (TO-66) and symbol Collector Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 90 80 7 4 2 50 150 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICEV ICEO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1 A ; IB=0 IC=1.5A; IB=0.15A IC=1.5A ; VCE=2V VCE=80V;VBE(off)=-1.5V TC=150℃ VCE=60V; IB=0 VEB=7V; IC=0 IC=4A ; VCE=2V IC=1.5A ; VCE=2V 5 25 MIN 80 TYP. 2N6261 MAX UNIT V 0.5 1.5 0.5 1.0 0.5 0.2 V V mA mA mA 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6261 Fig.2 Outline dimensions 3