2N6263

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・A wide variety of medium-to-high power, high-voltage applications ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6263 2N6264 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 2N6263 Collector-base voltage 2N6264 2N6263 VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage 2N6264 Emitter-base voltage Collector current Collector current-peak Base current 2N6263 Total power dissipation 2N6264 Junction temperature Storage temperature TC=25℃ Open collector Open base 150 7 3 4 2 20 W 50 150 -65~200 ℃ ℃ V A A A Open emitter 170 120 V CONDITIONS VALUE 140 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER 2N6263 Thermal resistance junction to case 2N6264 3.5 MAX 8.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6263 IC=0.1 A ; IB=0 2N6264 2N6263 2N6264 2N6263 VBE Base -emitter on voltage 2N6264 2N6263 ICEX Collector cut-off current 2N6264 2N6263 ICEO Collector cut-off current 2N6264 2N6263 IEBO Emitter cut-off current 2N6264 2N6263 hFE-1 DC current gain 2N6264 2N6263 hFE-2 DC current gain 2N6264 fT Transition frequency Second breakdown collector current with base forward biased 2N6263 2N6264 IC=0.2A ; VCE=4V IC=3A ; VCE=2V 5 200 0.167 IC=1A ; VCE=2V 20 3 VEB=7V; IC=0 IC=0.5 A ; VCE=4V 20 VCE=130V;IB=0 VEB=5V; IC=0 IC=1.0A ; VCE=2V VCE=120V; VBE(off)=-1.5V TC=150℃ VCE=150V; VBE(off)=-1.5V TC=150℃ VCE=100V;IB=0 IC=0.5A; IB=0.05A IC=1.0A; IB=0.1A IC=0.5A ; VCE=4V 140 CONDITIONS MIN 120 2N6263 2N6264 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V VCEsat Collector-emitter saturation voltage 1.2 V 0.5 2.0 V 1.5 2 10 0.05 1.0 5 mA 1 2 mA 0.2 100 60 mA KHz Is/b VCE=120Vdc,t=1.0s, Nonrepetitive A 0.417 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6263 2N6264 Fig.2 Outline dimensions 3