2N6308

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High power dissipation APPLICATIONS ·Designed for high voltage inverters, switching regulators,line operated amplifiers, and switching power supplies applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6308 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tc=25℃ CONDITIONS Open emitter Open base Open collector VALUE 700 350 8 8 4 125 200 -65~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat VBE ICEV ICEO IEBO hFE-1 hFE -2 COB fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=3A; IB=0.6A IC=8A; IB=2.67A IC=8A; IB=2.67A IC=3A ; VCE=5V VCE=700V; VBE=-1.5V VCE=350V; IB=0 VEB=8V; IC=0 IC=3A ; VCE=5V IC=8A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.3A ; VCE=10V;f=1MHz 5 12 3 MIN 350 TYP. 2N6308 MAX UNIT V 1.5 5.0 2.5 1.5 0.5 0.5 1.0 60 V V V V mA mA mA 250 pF MHz Switching times tr ts tf Rise time Storage time Fall time VCC=125V; IC=3.0A; IB=0.6A 0.6 1.6 0.4 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6308 Fig.2 Outline dimensions 3