2N6354

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Fast switching speed ・Low collector saturation voltage ・High power dissipation APPLICATIONS ・For switching applications in military and industrial equipment PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6354 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 120 6.5 10 12 5 140 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N6354 MAX UNIT V(BR)CEO Collector-emitter breakdwon voltage IC=0.2A ;IB=0 120 V V(BR)EBO Emitter-base breakdwon voltage IE=5m A ;IC=0 6.5 V VCEsat-1 Collector-emitter saturation voltage IC=5A ;IB=0.5A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=1A 1.0 V VBE sat-1 Base-emitter saturation voltage IC=5A ;IB=0.5A 1.3 V VBE sat-2 Base-emitter saturation voltage IC=10A; IB=1A VCE=100V;VBE=0 TC=125℃ VCE=140V; IB=0 2.0 V ICEO Collector cut-off current 10 10 20 5 mA ICEV Collector cut-off current mA ICBO Collector cut-off current VCB=150V; IE=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=5A ; VCE=2V 20 150 hFE-2 DC current gain IC=10A ; VCE=2V 10 100 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6354 Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3