2N6470

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose types of switching and linear-amplifier applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6470 2N6471 2N6472 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6470 VCBO Collector-base voltage 2N6471 2N6472 2N6470 VCEO Collector-emitter voltage 2N6471 2N6472 VEBO IC IB PT Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 50 70 90 40 60 80 5 15 5 125 150 -65~200 V A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.4 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6470 2N6471 2N6472 CONDITIONS MIN TYP. MAX UNIT 2N6470 Collector-emitter sustaining voltage 40 VCEO(SUS) 2N6471 IC=0.2A ;IB=0 60 V 2N6472 80 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 3.5 V VBE Base-emitter on voltage IC=15A ; VCE=4V 3.5 V ICEO Collector cut-off current VCE=1/2Rated VCEO; IB=0 VCE= Rated VCEO; VBE=-1.5V TC=150℃ VEB=5V; IC=0 1.0 0.2 5.0 1.0 mA ICEX Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=5A ; VCE=4V 20 150 hFE-2 DC current gain IC=15A ; VCE=4V 5 fT Transition frequency IC=0.5A ; VCE=10V 4 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6470 2N6471 2N6472 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3