INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2N6500
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 90V(Min) ·Wide Area of Safe Operation
APPLICATIONS ·Designed for use in high-current, high-speed switching circuits such as:low-distortion power amplifiers,oscillators, switching regulators, series regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VCER VEBO IC ICM IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage RBE= 50Ω Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE 120 90 110 7 4 5 3 35 200 -65~200 UNIT V V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2N6500
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA; IB= 0 IC= 200mA; RBE= 50Ω
90
V
VCER(SUS)
Collector-Emitter Sustaining Voltage
110
V
VCE(sat) VBE(sat) ICEV
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.5
V
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A VCE= 110V; VBE= -1.5V VCE= 110V; VBE= -1.5V; TC= 150℃ VCE= 70V; IB= 0
2.5 5 10 5
V
Collector Cutoff Current
mA
ICEO
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
25
mA
hFE
DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current-Gain—Bandwidth Product
IC= 3A; VCE= 2V
15
60
Is/b fT
VCE= 40V, t= 1.0s, Nonrepetitive
0.4
A
IC= 0.5A; VCE= 10V
6
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
175
pF
isc Website:www.iscsemi.cn
2
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