Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators
PINNING PIN 1 2 3 Base Emitter DESCRIPTION
2N6753 2N6754
Fig.1 simplified outline (TO-3) and symbol Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N6753 VCBO Collector-base voltage 2N6754 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open base Open collector Open emitter 1000 500 8 10 5 150 -65~175 -65~200 V V A A W ℃ ℃ CONDITIONS VALUE 900 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS
2N6753 2N6754
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
500
V
VCEsat-1 VCEsat-2
Collector-emitter saturation voltage
IC=5A; IB=1A IC=10A; IB=3A
1.0
V
Collector-emitter saturation voltage
3.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A VCE=900V; VBE=-1.5V TC=100℃ VCE=1000V; VBE=-1.5V TC=100℃ VEB=8V; IC=0
1.3 0.1 1.0
V
2N6753 ICEV Collector cut-off current 2N6754
mA 0.1 1.0 2.0 mA
IEBO
Emitter cut-off current
hFE COB
DC current gain
IC=5A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz
8
40
Output capacitance
50
250
pF
fT
Transition frequency
IC=0.2A ; VCE=10V
15
60
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6753 2N6754
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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