2SA1107

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION ·With MT-200 package ·High power dissipations APPLICATIONS ·Audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -10 120 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1107 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -150 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA ; IC=0 IC=-5A ;IB=-0.5A B -5 V Collector-emitter saturation voltage -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V μA μA ICBO Collector cut-off current VCB=-140V; IE=0 -10 IEBO Emitter cut-off current VEB=-5V; IC=0 -10 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 fT DC current gain IC=-5A ; VCE=-5V IC=-0.5A ; VCE=-10V 35 Transition frequency 50 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1107 Fig.2 outline dimensions 3