2SA1209

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SA1209 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -180 -160 -5 -0.14 -0.20 1.0 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat ICBO IEBO hFE fT Cob PARAMETER Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=-5mA VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-10mA ; VCE=-5V IC=-10mA ; VCE=-10V IE=0 ; VCB=-10V;f=1MHz 100 MIN 2SA1209 TYP. MAX -0.4 -0.1 -0.1 400 UNIT V μA μA 150 4.0 MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=10mA IB1=-IB2=1mA 0.1 1.5 0.1 μs μs μs hFE Classifications R 100-200 S 140-280 T 200-400 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1209 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1209 4