2SA1215

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2921 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE -160 -160 -5 -15 -4 150 150 -55~150 UNIT V V V A A W ℃ ℃ Open collector PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ; IB=0 B 2SA1215 MIN -160 TYP. MAX UNIT V IC=-5A ;IB=-0.5A B -2.0 -100 -100 50 400 50 180 V μA μA VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IE=0 ; VCB=-10V;f=1MHz IC=-2A ; VCE=-12V pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12Ω IB1=-IB2=-0.5A VCC=-60V 0.25 0.85 0.20 μs μs μs hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1215 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1215 4