2SA1307

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3299 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -5 -5 -1 20 W V A A UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA , IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V;IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-1V IC=-3A ; VCE=-1V IE=0; VCB=-10V,f=1MHz IC=-1A ; VCE=-4V 70 30 170 60 MIN -50 2SA1307 TYP. MAX UNIT V -0.4 -1.2 -1.0 -1.0 240 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=-0.15A,VCC=30V RL=10Ω 0.1 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1307 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1307 4