Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1327
DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High current capacity APPLICATIONS ·Strobe flash applications ·Audio power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
·
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃
CONDITIONS Open emitter Open base Open collector
VALUE -50 -20 -8 -10 -20 -2 20
UNIT V V V A A A
PC
Collector power dissipation Ta=25℃ 2 150 -55~150
W
Tj Tstg
Junction temperature Storage temperature
℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SA1327
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA , IB=0
B
-20
V
VCEsat
Collector-emitter saturation voltage
IC=-8A; IB=-0.4A
-0.5
V
VBE
Base-emitter on voltage
IC=-8A ; VCE=-2V
-1.5
V
ICBO
Collector cut-off current
VCB=-50V;IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-8V; IC=0
-1.0
μA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
100
320
hFE -2
DC current gain
IC=-8A ; VCE=-2V
70
COB
Output capacitance
IE=0 ; VCB=-10V; f=1MHz
400
pF
fT
Transition frequency
IC=-1A ; VCE=-2V
45
MHz
hFE-1 Classifications O 100-200 Y 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1327
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1327
4
很抱歉,暂时无法提供与“2SA1327”相匹配的价格&库存,您可以联系我们找货
免费人工找货