Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB566 2SB566A
DESCRIPTION ・With TO-220C package ・Complement to type 2SD476/476A APPLICATIONS ・For low frequency power amplifier power switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Tc=25℃)
SYMBOL VCBO PARAMETER Collector-base voltage 2SB566 VCEO Collector-emitter voltage 2SB566A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collectorl power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base -60 -5 -4 -8 40 150 -55~150 V A A W ℃ ℃ CONDITIONS Open emitter VALUE -70 -50 V UNIT V
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CBO PARAMETER Collector-base breakdown voltage 2SB566 IC=-50mA; RBE=∞ 2SB566A IE=-10μA; IC=0 IC=-2 A;IB=-0.2 A IC=-2 A;IB=-0.2 A VCB=-50V; IE=0 IC=-0.1A ; VCE=-4V IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-4V CONDITIONS IC=-10μA ; IE=0
2SB566 2SB566A
MIN -70 -50
TYP.
MAX
UNIT V
V(BR)CEO
Collector-emitter breakdown voltage
V -60 -5 -1.0 -1.2 -1 35 60 15 200 MHz V V V μA
V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT
Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency
Switching times ton toff tstg Turn-on time Turn-off time Storage time IC=-0.5A ; VCC=-10.5V IB1=-IB2=-0.05 A 0.3 3.0 2.5 μs μs μs
hFE-2 classifications B 60-120 C 100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB566 2SB566A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB566 2SB566A
4
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