2SB628

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB628 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Complement to Type 2SD608 APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC ICM Collector Current-Continuous -1.5 A Collector Current-Peak -3.0 A IB B Base Current-Continuous Collector Power Dissipation @ Ta=25℃ -0.3 A 1.5 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB628 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A B -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -1.0 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -1.0 μA hFE-1 DC Current Gain IC= -5mA; VCE= -5V 25 hFE-2 DC Current Gain IC= -0.3A; VCE= -5V 40 200 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 35 pF fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V 40 MHz hFE-2 Classifications S 40-80 R 60-120 Q 100-200 isc Website：www.iscsemi.cn 2