2SB727

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB727 DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD768 APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ Junction Temperature -10 A PC 40 W ℃ Tj 150 Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= -25mA, RBE= ∞ MIN TYP. 2SB727 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA, IC= 0 -7 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO Collector-Emitter Saturation Voltage IC= -3A, IB= -6mA B -1.5 V Collector-Emitter Saturation Voltage IC= -6A, IB= -60mA B -3.0 V Base-Emitter Saturation Voltage IC= -3A, IB= -6mA B -2.0 V Base-Emitter Saturation Voltage IC= -6A, IB= -60mA B -3.5 V μA μA Collector Cutoff Current VCB= -120V, IE= 0 VCE= -100V; RBE= ∞ -100 ICEO Collector Cutoff Current -10 hFE DC Current Gain IC= -3A; VCE= -3V 1000 20000 Switching times μs μs ton toff Turn-On Time IC= -3A; IB1= -IB2= -6mA Turn-Off Time 1.0 3.0 isc Website：www.iscsemi.cn