0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SB778

2SB778

  • 厂商:

    ISC(固电半导体)

  • 封装:

  • 描述:

    2SB778 - Silicon PNP Power Transistors - Inchange Semiconductor Company Limited

  • 数据手册
  • 价格&库存
2SB778 数据手册
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB778 DESCRIPTION ・With TO-3PML package ・Complement to type 2SD998 APPLICATIONS ・High power amplifier applications ・Recommended for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX -120 -120 -5 -10 -1.0 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A;VCE=-5V VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 55 10 280 MIN -120 TYP. 2SB778 MAX UNIT V -2.5 -1.5 -10 -10 160 V V μA μA MHz pF hFE Classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB778 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB778 4
2SB778 价格&库存

很抱歉,暂时无法提供与“2SB778”相匹配的价格&库存,您可以联系我们找货

免费人工找货
2SB778
  •  国内价格
  • 1+3.64
  • 10+3.36
  • 30+3.304

库存:0