Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB870
DESCRIPTION ・With TO-220C package ・Complement to type 2SD866 ・Low collector saturation voltage ・High collector current capability APPLICATIONS ・For power switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -7 -15 40 150 -50~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB870
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-80
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.25A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.25A
-1.5
V μA μA
ICBO
Collector cut-off current
VCB=-100V; IE=0
-10
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
45
hFE-2
DC current gain
IC=-3A ; VCE=-2V
60
260
fT
Transition frequency
IC=-0.5A ; VCE=-10V
30
MHz
Switching times μs μs μs
ton
Turn-on time
0.1
tstg
Storage time
IC=-3A ; IB1=-IB2=-0.3A
0.8
tf
Fall time
0.1
hFE-2 Classifications R 60-120 Q 90-180 P 130-260
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB870
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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