2SC1061

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 DESCRIPTION ・With TO-220 package ・Low saturation voltage ・Complement to type 2SA671 ・Note: type 2SC1060 with short pin APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 50 50 4 3 8 0.5 25 150 -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IC=5mA ;IE=0 IE=5mA ;IC=0 IC=2A; IB=0.2A IC=1A ; VCE=4V VCB=25V;IE=0 VEB=4V; IC=0 IC=0.1A ; VCE=4V IC=1A ; VCE=4V IC=0.5A ; VCE=4V 35 35 5.0 MIN 50 50 4 2SC1061 TYP. MAX UNIT V V V 1.0 1.5 0.1 0.1 V V mA mA 320 MHz hFE-2 classifications A 35-70 B 60-120 C 100-200 D 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1061 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1061 4