2SC1212A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION ・With TO-126 package ・Complement to type 2SA743/743A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC1212 VCBO Collector-base voltage 2SC1212A 2SC1212 VCEO Collector- emitter voltage 2SC1212A VEBO IC Emitter-base voltage Collector current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 8 150 -55～+150 ℃ ℃ Open collector Open base 80 4 1 0.75 W V A Open emitter 80 50 V CONDITIONS VALUE 50 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC1212 V(BR)CEO Collector-emitter breakdown voltage 2SC1212A 2SC1212 V(BR)CBO Collector-base breakdown voltage 2SC1212A V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency IE=1mA ;IC=0 IC=1A ;IB=0.1A IC=50mA ; VCE=4V VCB=50V; IE=0 IC=50mA ; VCE=4V IC=1A ; VCE=4V IC=30mA ; VCE=4V IC=1mA ;IE=0 IC=10mA ;RBE=∞ CONDITIONS 2SC1212 2SC1212A MIN 50 TYP. MAX UNIT V 80 50 V 80 4 1.5 1.0 5 60 20 160 MHz 200 V V V μA hFE-1 Classifications B 60-120 C 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1212 2SC1212A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A 4