2SC1316

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1316 DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·Suitable for switching power supplies in TV sets PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 750 750 5 2 23 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=1A ;IB=0.2A IC=1A ;IB=0.2A VCB=750V;IE=0 VEB=5V; IC=0 IC=2A ; VCE=3V IC=0.5A ; VCE=10V 4 MIN 750 5 2SC1316 TYP. MAX UNIT V V 3.0 1.2 100 100 14 8.5 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1316 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3