2SC1907

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous -50 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) ICBO hFE fT COB rbb’ • CC Pout PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance Base Time Constant Oscillation Output Power CONDITIONS IC= 10μA ; IE= 0 IC= 3mA ; RBE= ∞ IE= 10μA ; IC= 0 IC= 20mA ; IB= 4mA VCB= 10V; IE= 0 IC= 10mA ; VCE= 10V IC= 10mA ; VCE= 10V IE= 0 ; VCB= 10V;f= 1.0MHz VCB= 10V,IC = 10 mA,f = 31.8 MHz VCB = 10 V,IC = 10mA;f = 930MHz 40 900 MIN 30 19 2 2SC1907 TYP. MAX UNIT V V V 1.0 0.5 V μA 1100 1.0 10 8 2.0 25 MHz pF ps mW isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 isc Website：www.iscsemi.cn 4