2SC2209

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 3 A PC 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2209 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 IC= 2mA; IB= 0 B 50 V V(BR)CEO Collector-Emitter Breakdown Voltage 40 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 1.0 V Base-Emitter Saturation Voltage IC= 2A; IB= 0.2mA B 1.5 V μA μA μA Collector Cutoff Current VCB= 20V; IE= 0 VCE= 10V; IB= 0 B 1 ICEO Collector Cutoff Current 100 ICEO Collector Cutoff Current VEB= 5V; IC= 0 10 hFE DC Current Gain IC= 1A; VCE= 5V 80 220 fT Current-Gain—Bandwidth Product IE= -0.5A; VCB= 5V 150 MHz COB Output Capacitance IE= 0; VCB= 5V, ftest= 1MHz 50 pF hFE Classifications Q 80-160 R 120-220 isc Website：www.iscsemi.cn 2