Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2580
DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1105 ・High power dissipation ・High current capability APPLICATIONS ・Audio power amplifier ・DC-DC converter
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 180 120 6 9 90 150 -55~150 UNIT V V V A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC2580
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
120
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.5
V μA μA
ICBO
Collector cut-off current
VCB=180V; IE=0
100
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
hFE
DC current gain
IC=3A ; VCE=4V
50
fT
Transition frequency
IC=0.5A ; VCE=10V
20
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2580
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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